2SK1531 ,Discrete SemiconductorsAbsolute Maximum Ratings (Ta = MCICHARACTERISTIC SYMBOL RATINGDrain-Source Voltage hssOraiiAlaie Vo ..
2SK1531 ,Discrete SemiconductorsThermal CharacteristicsC0RACTERl8Tl0 I SYMBOLI MAX. I UNITThermal Resistance, Channel to Case MM) I ..
2SK1533 , HVX Series Power MOSFET
2SK1533 , HVX Series Power MOSFET
2SK1539 , HVX Series Power MOSFET
2SK1553-01MR ,N-CHANNEL SILICON POWER MOSFETApplications l?t0/d _ , _vmm i"
.Suvitching regulators 7 _ _ % 23.2.3.
. UFS 1 _ - __t 3 Source
..
3412.0124.24 , Non resettable fuses
34151 , TERMINAL, RING TONGUE, PLASTI-GRIP WIRE SIZE, 22-16 AWG
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
2SK1531
Discrete Semiconductors
TOSHIBA
Discrete Semiconductors 2SK1531
Field Effect Transistor Industrial Applications Unit in mm
Silicon N Channel MOS Type (FMOS lll.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications
Features
. Low Drain-Source ON Resistance
- RDS(ON) = 0.380 WW1)
. High Forward Transfer Admittance
- MS I = 7.0S mm
. Low Leakage Current
- bss = 30% (Max.) @ V03: 500V
. Enhancement-Mode
20.0: 0.3
2 0.52 0.5
6.4 5:02 5.4 5t0.2
-Vih=2.0-4.0V@Nbs=10MIro=1mA .9...
Absolute Maximum Ratings (Ta = MC) g ‘3: , M
CHARACTERISTIC SYMBOL RATING UNIT 3 'l l; 2c, .1 --h'i,.
Dxain-Source Voltage V055 500 V l v
0rairr41ate Voltage (flue 20m) hm 500 ll 1. GATE
Gale-Source Voltage hs 130 ll 2. DRAIN (HEAT SINK)
Drain Current 00 b 15 A l SOURCE
Pulse la, 60 JEDEC -
$22223 thssipati0r1 h, 150 W EI A J S C- 6 5
Channel Temperature li 150 ”C TOSHIBA 2-16CIB
Storage Temperature Range k, -55 - 150 “C Weight 2 4.6g
Thermal Characteristics
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistima, Channel to Case B(dH) 0.833 °C/W
Thermal Resistance, Channel to Ambient a(uh-a) 50 °C/W
This transistor is an electrostatic sensitive device. Please handle with care.
TOSHIBA CORPORATION 1/6
D 3097250 til0i?hiai?'? SIU, D
28K1531
Electrical Characteristics (Ta = 256)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX UNIT
Gate Leakage Current ks hz = t25)l, Vos-- (h/ - - i100 "
Drain Cut-oft Current ks hs = 500V, V55: (N - - 300 pk
Drain-Source Breakdown Voltage bs; 055 ID = 1(WA, ks = UV 500 - - V
Gale Threshold Voltage li, hs = 10V, ID: 1mA 2.0 - 4.0 V
Drain-Source 0N Resistance k (ON) b = m, Ia--1ov' - 0.38 0.45 n
Forward Transfer Admittance hl hs = 10V, b-- 7A 6.0 7.0 - S
Inpul Capacitance qss - 1480 2300
Reverse Transfer Capacitance (k, £31: gl t V55: w, - 240 300 pF
Output Capacitance G - 400 550
Rise Time t - 90 180
Switching Tum-on Time G ID = 7A VOUT - 120 240
Time Fall Time l v 10V "-iii?ic--vs1't't1 - 110 220 ns
Tum-off Time b, GS o n 3 - 250 500
VIN '. tr, ted,',, i/DDS-mov
Duty s, 1%, tw=10,us
Total Gale Charge th - 60 75
(tlate-Source Plus (hte-Drain) Von = 400V, ks = IW,
Gale-Source Charge (1,5 b = 15A - 25 - "C
Gate-Drain ('Miller') Charge (h - 35 -
Source-Drain Diode Ratings and Characteristics (Ta = =
CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse Current kn - - - 15 A
Pulse Drain Reverse Current IDRP - - - 60 A
Diode Forward Voltage V35; be = 15A, hs-- IN - - -1.7 V
Reverse Recovery Time trr b, = 15A, V65: iN - 750 - n5
Reverse Recovered Charge Orr dliysldl = INMS - 5.6 - uc
Cl clly37ESiil 003M326 HIE D
TOSHIBA CORPORATION
ID - Vos
COMMON SOURCE IO
Tc-25'C
E sz-4.5v
0 1 2 3 4 5 6
DRAIN-SOURCE VOLTAGE Vns (V)
ID -. VGS
COMMON SOURCE
vnsszov
0 2 4 6 8 10 12
GA'rE.s0URCE VOLTAGE v.35 1Vt
'stl - ID
2 COMMON SOURCE
E VDs=20V
0.3 l 3 IO 20
DRAIN CURRENT ID (A)
DRAlN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT In (A)
nnmN-sounca ON RESISTANCE
803mm (m
2SK1531
ID - Vns
COMMON SOURCE
Tc-ZS'C
VGS" 4.5V
20 " so 80 100 I20
DRAtN4X9URCE VOLTAGE VDS (V)
Vns - Vcs
COMMON SOURCE
Te - 25'0
4 s n 16 20 n
GA-rasounca VOLTAGE vas IV)
Roswm - ID
COMMON SOURCE
Te " 26%
vcs=15v
a _ 5 10 so 50
DRAIN CURRENT In (A)
TOSHIBA CORPORATION
III 9097350 UDELEE‘]
35"! E3
28K1531
mumsouncx 0N RESISTANCE
Rosmm m)
CAPACITANCE C (p?)
DRAIN POWER DISSIPA'HON PD (W)
RDS (0N) - Tc
lD-I5A
COMMON SOURCE
VGs=10V
.-80 -(0 O 40 80 I20 160
CASE TEMPERATURE Te cm
CAPACITANCE - VDS
COMMON SOURCE
Vcsaov
f-IMH:
Tc=25'C
0.3 l 3 10 30 lot)
DRAIN-SOURCE VOLTAGE Vos (V)
0 40 80 I20 160 200
CASE TEMPERATURE Tc CC)
DRAIN REVERSE CURRENT {OR (A)
GATE THRESHOLD VOLTAGE Va, (V)
DRAlN-SOUECE VOLTAGE V95
IDR - VDS
COMMON
SOURCE
Te "25'C
0 .-0.t -0.8 -l.2 -t.6 -2.0 -2.4 -2.8
DRAIN-SOURCE VOLTAGE Vns (V)
Vth - Te
COMMON SOURCE
VGs-IOV
ID- ImA
-80 .-40 o 40 so t20 160
CASE TEMPERATURE Te cm
DYNAMIC INPUTIOUTPUT
COMMON
SOURCE 6
ID" 15A
Tc=25'C
Vppa IOOV
0 10 20 $0 40
TOTAL GATE CHARGE Q8 (nC)
GATE-SOURCE VOLTAGE V05 (V)
TOSHIBA CORPORATION
D “1097250 0021531] D70 III
2SK1531
rth - tw
Duty I 0.5
0 PDMI I l I
.0 t:T_..
SINGLE PULSE
IMPEDANCE 'Lh “)IM(QM)
Duly‘u‘r
Itth (ch.¢)-O.81I'CI W
NORMAUZED TRANSIENT THERMAL
10;: 100;: 1m 10m 100m 1 10
PULSE WIDTH tw (l)
SAFE OPERATING AREA
1 MAXJPULSEDWS
ID MAX.
(CONTINUOUS)
DC OPERATT
tt Tc-ZS‘C
if, >32 MNGLE NONREPETmYE
PULSE Tc-25’C
CURVES MUST BE namrn-zo
LINEARLY WITH INCREASE m
TEMPERATURE. Voss MAX.
1 3 w 30 100 $00 1000
DRAIN~SOURCE VOLTAGE vDs (V)
TOSHIBA CORPORATION 5/6
E] HDH?ESU DUELEBL TU? E]
www.ic-phoenix.com
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