IC Phoenix
 
Home ›  2226 > 2SK1489,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5) Chopper Regulator Applications
2SK1489 Fast Delivery,Good Price
Part Number:
If you need More Quantity or Better Price,Welcom Any inquiry.
We available via phone +865332716050 Email
Partno Mfg Dc Qty AvailableDescript
2SK1489TOSHIBAN/a42avaiField Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5) Chopper Regulator Applications
2SK1489 |2SK1489TOS N/a50avaiField Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5) Chopper Regulator Applications


2SK1489 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5) Chopper Regulator ApplicationsApplications Unit: mm Low drain−source ON resistance : R = 0.8 Ω (typ.) DS (ON)High forward t ..
2SK1489 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5) Chopper Regulator ApplicationsThermal Characteristics TOSHIBA 2-21F1B Characteristics Symbol Max Unit Weight: 9.75 g (typ.) Therm ..
2SK1491 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C) _—---—m ”m-mm Forward Transfer Admittance T 7.0 100 ..
2SK1492 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEapplications. ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature --55 to +150 ° ..
2SK1503-01 ,Fuji power MOSFET Specification, V Fuji power MUSFET Specification 2 S PC 1 5 O 3 - O 1 . Scope this specifies Fuji power MOSF ..
2SK1506 ,N-CHANNEL SILICON POWER MOSFETFeatures mt High current 11' Low no-resistance tut Low driving power IHIHigh forward Tr ..
34071 , SPLICE, BUTT, PLASTI-GRIP WIRE SIZE 16-14 AWG
3412.0124.24 , Non resettable fuses
34151 , TERMINAL, RING TONGUE, PLASTI-GRIP WIRE SIZE, 22-16 AWG
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP


2SK1489
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5) Chopper Regulator Applications
2SK1489 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1489

Chopper Regulator Applications Low drain−source ON resistance : RDS (ON) = 0.8 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = 300 µA (max) (VDS = 800 V) Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)

Thermal Characteristics
Rth (ch−a) 35.7
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 9.75 g (typ.)
ic,good price


TEL:86-533-2716050      FAX:86-533-2716790
   

©2020 IC PHOENIX CO.,LIMITED