2SK1488 ,Field Effect Transistor Silicon N Channel MOS TypeAbsolute Maximum Ratings (Ta = 25°C)CHARACTERISTIC SYMBOL RATING UNITDrain-Source Voltage VDSS 500 ..
2SK1489 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5) Chopper Regulator ApplicationsApplications Unit: mm Low drain−source ON resistance : R = 0.8 Ω (typ.) DS (ON)High forward t ..
2SK1489 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5) Chopper Regulator ApplicationsThermal Characteristics TOSHIBA 2-21F1B Characteristics Symbol Max Unit Weight: 9.75 g (typ.) Therm ..
2SK1491 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
_—---—m
”m-mm
Forward Transfer Admittance T 7.0
100 ..
2SK1492 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEapplications.
ABSOLUTE MAXIMUM RATINGS
Maximum Temperatures
Storage Temperature --55 to +150 ° ..
2SK1503-01 ,Fuji power MOSFET Specification,
V Fuji power MUSFET Specification
2 S PC 1 5 O 3 - O 1
. Scope
this specifies Fuji power MOSF ..
34071 , SPLICE, BUTT, PLASTI-GRIP WIRE SIZE 16-14 AWG
3412.0124.24 , Non resettable fuses
34151 , TERMINAL, RING TONGUE, PLASTI-GRIP WIRE SIZE, 22-16 AWG
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
2SK1488
Field Effect Transistor Silicon N Channel MOS Type
TOSHIBA
Discrete Semiconductors 2SK1488
Field Effect Transistor Unit in mm
Silicon N Channel MOS Type (a-MOS Ill.5)
High Speed, High Current DC-DC Converter, 15.9MAX A3.2b0.2
. . . . v-a' mr'
Relay Drive and Motor Drive Applications
_........-...---- to.
Features 3
. Low Drain-Source ON Resistance -; g
- RDS(ON) = 0-759 (Typ.) 'e. oi N
. High Forward Transfer Admittance
- lstl = 4.9S (Typ.) o.
. Low Leakage Current 3
- IDSS I 300PA (Max.) © VDS I 500V W.
. Enhancement-Mode Ci'
- Vth--2.0-4.0V@Vrys--10V,ko--1mA ---.
5.4 " 0.2 5.4 5 .2
Absolute Maximum Ratings (Ta = 25°C) ht)
CHARACTERISTIC SYMBOL RATING UNIT dd
+ I , it
Drain-Source Voltage VDSS 500 V cq g - u - -- " 2
Drair%teVoltage (Rss--20kn) hw, 500 v "H. _ l -- 2 "H 'e,'.
Gate-Source Voltage V i130 V
Drain Current DC C? 10 A 1. GATE
C) 2. DRAIN (HEAT SINK)
Pulse IDP 40 3. SOURCE
Drain Power Dissipation Po 125 W
(Tc=25°C) JEDEC -....-
Channel Temperature u 150 oO
Storage Temperature Range T319 -55 - 150 T EIAJ SC-65
TOSHIBA 2-1601B
Weight : 4.6g
Thermal Characteristics
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case th(ch-c) 1.0 ''0/W
Thermal Resistance, Channel to Ambient RIh(Ch-a) 50 ''0/W
This transistor is an electrostatic sensitive device.
Please handle with care.
TOSHIBA CORPORATION 1/6
This Material Copyrighted By Its Respective Manufacturer
2SKI 488
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current less Miss = _30V, Vos = 0V - - i100 nA
Drain Cut-off Current bss Vns = 500V, Ves = 0V - - 300
Drain-Source Breakd own Voltage Vom DSS ID = 10mA, Ves = ov 500 - - V
Gate Threshold Voltage Mr, hos = 10V, b =1rnA 2.0 - 4.0 V
Drain-Source 0N Resistance Ras (0N) ID = 5A, Vss =10V - 0.75 1.0 n
Forward Transfer Admittance h, l hos = 10v, b = 5A 3.0 4.9 - s
Input Capacitance Ciss - 870 1100
Reverse Transfer Capacitance Crss $181113} Vss = (IV, - 75 250 pF
Output Capacitance COSS - 210 300
Rise Time tr - 30 90
Switching Turn-on Time ton ID=5A. VOUT - 60 140
Time Fall Time. l vrr1slv.n fi' RL =4on - 35 130 ns
Tum-off Time to” u; - 100 300
VIN ' tr, tf< sfia, VDD:QOGV
Duty ru 1%, tw TSr. 10/15
Total Gate Charge l, - 40 85
(Gate-Source Plus (2ale-Orain) VDD = 400V, Vss = 10V,
Gate-Source Charge ' ID =IOA - 16 _ “C
(2ate-Orain ("Miller") Charge di - 24 -
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse Current be - - - 10 A
Pulse Drain Reverse Current IDRP - - - 40 A
Diode Forward Voltage VDSF be =10A, Ves = (IV - - -2.0 V
Reverse Recovery Time trr be =10A, Ves = (IV - 360 - ns
Reverse Recovered Charge 0rr dlm/dt 2100MB - 3.0 - “C
2/6 TOSHIBA conponATloN
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2SK1 488
ID - VDS ID - VDS
COMMON SOURCE
Tc=25°C
COMMON SOURCE
Tc=25°C
ca Vcszdév ©
2 4 6 8 10 12 4 8 12 t6 20 24
DRAINSOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V)
VDS - VGS {Yrsl - ID
COMMON SOURCE
Tc: MT
COMMON SOURCE
VD3=20V
FORWARD TRANSFER ADMITTAN‘CE
[stf (S)
DRAIN-SOURCE VOLTAGE VDS (V)
0 4 8 tlt tii 20 24 0.1 0.3 0.5 1 3 5 10
GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A)
ID - VGS RDSfON) - ID
COMMON SOURCE J; m
2 Vps=20V E
J? 8 tiiii,r,
t; n15 Vcs=15V
g oz o
g M ti?.
E 4 , (ks, 25 'i'
Ct Tc=ioirch/ D E COMMON SOURCE
dj(/f -55 g Tc=25’C
0 A I thl
0 2 4 6 8 0.3 0.5 1 3 F 10
CASE TEMPERATURE Tc CC) DRAIN CURRENT tn (A)
TOSHIBA CORPORATION 3/6
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2SKI 488
RDS(0N) - Tc A Vth _ Te
Z VGS=10V > Vns=lov
it' I =lmA
0),. <
o a tm
40 -do o 40 so 120 160 -80 M40 0 40 so 120 160
CASE TEMPERATURE Te cc: CASE TEMPERATURE Te CC)
CAPACITANCE - VDS IDR - VDS
COMMON SOURCE
Tc=25°C
li rx:
t COMMON SOURCE ti
0 Vgs=10V ie
f=1MHz “-1
r .. X!
fc=25(, m
.1 0.3 1 3 10 30 100 z
DRAIN-SOURCE VOLTAGE VDS (V) E
PD - Tc
_ o .0.4 -0.8 ~12 -t.6 -.2_0 -21
a. 1 DRAIN-SOURCE VOLTAGE VDS (V)
o 40 so 120 160 200
CASE TEMPERATURE Te NC;
4/6 TOSHIBA CORPORATION
This Material Copyrighted By Its Respective Manufacturer
2SK1 488
rth - tw
t': i; Duty=00
F, E 0.5
SE 0.3
5e: m M
yo . IMIL
are: l T
m < ---------
tici ih05
g; th03 SINGLE PULSE
g- DutyztlT
a RIP] (chm): 1.0°CIW
10e 100% Im 10m 100m t 10
PULSE WIDTH rw (s)
SAFE OPERATING AREA
5 :11) MAmeULSme _ i00es.lK
ID MAX. Imsy.4
A (CONTINUOUS) 10mr)k
e 3 DC OPERATION
f, Tc=25’C
Cl 0.3
yf SINGLE NONREPETITIVE
PULSE Tc=25‘C
0.1 CURVES MUST BE DEKATED
0 LINEARLY WITH INCREASE IN
(L, TEMPERATURE. Vuss MAX.
3 5 10 30 50 too 300 500 1000
DRAIN-SOURCE VOLTAGE VDS (V)
TOSHIBA CORPORATION 5/6
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