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2SK1486TOSHIBAN/a52avaiField Effect Transistor Silicon N Channel MOS Type (pi-MOSIII .5 ) Chopper Regulator, DC .DC Converter and Motor Drive Applications


2SK1486 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII .5 ) Chopper Regulator, DC .DC Converter and Motor Drive ApplicationsApplications Low drain−source ON resistance : R = 0.08 Ω (typ.) DS (ON)High forward transfer ..
2SK1488 ,Field Effect Transistor Silicon N Channel MOS TypeAbsolute Maximum Ratings (Ta = 25°C)CHARACTERISTIC SYMBOL RATING UNITDrain-Source Voltage VDSS 500 ..
2SK1489 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5) Chopper Regulator ApplicationsApplications Unit: mm Low drain−source ON resistance : R = 0.8 Ω (typ.) DS (ON)High forward t ..
2SK1489 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5) Chopper Regulator ApplicationsThermal Characteristics TOSHIBA 2-21F1B Characteristics Symbol Max Unit Weight: 9.75 g (typ.) Therm ..
2SK1491 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C) _—---—m ”m-mm Forward Transfer Admittance T 7.0 100 ..
2SK1492 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEapplications. ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature --55 to +150 ° ..
34071 , SPLICE, BUTT, PLASTI-GRIP WIRE SIZE 16-14 AWG
3412.0124.24 , Non resettable fuses
34151 , TERMINAL, RING TONGUE, PLASTI-GRIP WIRE SIZE, 22-16 AWG
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP
34164 , TERMINAL, RING TONGUE, PLASTI-GRIP


2SK1486
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII .5 ) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SK1486 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII.5)
2SK1486

Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 0.08 Ω (typ.) High forward transfer admittance : |Yfs| = 14 S (typ.) Low leakage current : IDSS = 300 µA (max) (VDS = 300 V) Enhancement−mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)

Thermal Characteristics
Rth (ch−a) 35.7
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 9.75 g (typ.)
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