2SK1365 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) Switching Power Supply ApplicationsApplications Unit: mm Low drain−source ON resistance : R = 1.5 Ω (typ.) DS (ON)High forward t ..
2SK1374 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK1381 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSIII) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSApplications 4 V gate drive Low drain−source ON resistance : R = 25 mΩ (typ.) DS (ON)High ..
2SK1382 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSIII) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSApplications 4 V gate drive Low drain−source ON resistance : R = 15 mΩ (typ.) DS (ON)High ..
2SK1382 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSIII) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSThermal Characteristics Weight: 9.75 g (typ.) Characteristics Symbol Max Unit Thermal resistance, ..
2SK1384 ,N-CHANNEL ENHANCEMENT TYPE MOS-FETFeatures
"ligh speed switching
q Low on-resistance
q No secondary breakdown
. u Wif drivi ..
34050 , INDUCTOR, 1000 μH, 0.90 ADC, BUCK
34050 , INDUCTOR, 1000 μH, 0.90 ADC, BUCK
34051 , INDUCTOR, 1500 μH, 0.62 ADC, BUCK
34063AM , 1.5A STEP-DOWN/STEP-UP/INVERTING DC-DC CONVERTER
34063AM-E1 , 1.5A STEP-DOWN/STEP-UP/INVERTING DC-DC CONVERTER
34071 , SPLICE, BUTT, PLASTI-GRIP WIRE SIZE 16-14 AWG
2SK1365
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) Switching Power Supply Applications
2SK1365 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1365 Switching Power Supply Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 µA (max) (VDS = 800 V) Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 41.6
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 5.8 g (typ.)
