2SK1363 ,Silicon N-Channel MOS Type / High Speed / High Current Switching ApplicationsAbsolute Maximum Ratings (Ta = 25°C)CHARACTERISTIC SYMBOL RATING UNITDrain-Source Voltage VDSS 900 ..
2SK1365 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) Switching Power Supply ApplicationsApplications Unit: mm Low drain−source ON resistance : R = 1.5 Ω (typ.) DS (ON)High forward t ..
2SK1374 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain to Source c ..
2SK1381 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSIII) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSApplications 4 V gate drive Low drain−source ON resistance : R = 25 mΩ (typ.) DS (ON)High ..
2SK1382 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSIII) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSApplications 4 V gate drive Low drain−source ON resistance : R = 15 mΩ (typ.) DS (ON)High ..
2SK1382 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-PI-MOSIII) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONSThermal Characteristics Weight: 9.75 g (typ.) Characteristics Symbol Max Unit Thermal resistance, ..
34050 , INDUCTOR, 1000 μH, 0.90 ADC, BUCK
34050 , INDUCTOR, 1000 μH, 0.90 ADC, BUCK
34051 , INDUCTOR, 1500 μH, 0.62 ADC, BUCK
34063AM , 1.5A STEP-DOWN/STEP-UP/INVERTING DC-DC CONVERTER
34063AM-E1 , 1.5A STEP-DOWN/STEP-UP/INVERTING DC-DC CONVERTER
34071 , SPLICE, BUTT, PLASTI-GRIP WIRE SIZE 16-14 AWG
2SK1363
Silicon N-Channel MOS Type / High Speed / High Current Switching Applications
TOSHIBA
Discrete Semiconductors
Field EffectTransistor
Silicon N Channel MOS Type (z-MOS Il.5)
High Speed, High Current Switching Applications
Features
. Low Drain-Source ON Resistance
- RDS(0N) = 1-19 (Typ.)
. High Forward Transfer Admittance
- |st l = 4.0S m.)
. Low Leakage Current
- les = 300pA (Max.) @ VDs = 720V
. Enhancement-Mode
- Vth--1.5-3.5V@Vros--10V, b=1mA
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Drain»Source Voltage VDSS 900 V
Drain-Gate Voltage (Res = 20kg) VDGR 900 V
(Sale-Source Voltage 1/sss :30 V
Drain Current oo b 8
Pulse b, 24 A
Drain Power Dissipation PD 90 W
(Tc = 25°C)
Channel Temperature Tch 150 oO
Storage Temperature T519 -55 - 150 °C
Thermal Characteristics
CHARACTER ISTIC
Thermal Resistance, Channel to Case
Thermal Resistance, Channel to Ambient
SYMBOL MAX. UNIT
th(ch_c) 1.39 DC/W
R[h(ch_a) 41.6 OC/W
This transister is an electrostatic sensitive device.
Please handle with caution.
2SK1363
Unit in mm
15.8 t 0.5
3.6 10.2
5.45102 -
Ti5-0.1
g-iii 1 2 LL..-'..''' 42
: SE! TEIt] ure),
tl,.' tEIttetLL... g
c: ua'
1. GATE
2. DRAIN
3. SOURCE
TOSHIBA
TOSHIBA CORPORATION
2SK1363
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current less Ves = 1-25\/, Vos = (h/ - - :100 nA
Drain Cot-or Current loss VDS = 720V, Ves = 0V - - 300 pk
Drain-Source Breakdown Voltage V(BR) oss b = 10mA, Veg = UV 900 - - V
Gate Threshold Voltage Mr, hr; = -10V, ID: -1mA 1.5 - 3.5 V
Drain-Source 0N Resistance Ros (0N) b = 4A, Ves = 10V - 1.1 1.4 n
Forward Transfer Admittance lh, l vDS = 20v, bs = 4A 2.0 4.0 - s
Input Capacitance Ciss - 1300 1800
V = 25V, V = W, F
Reverse Transfer Capacitance Crss 13% MHz GS - 100 150 p
Output Capacitance CUSS - 180 260
Rise Time tr - 25 50
. ID: "
Switching Time Turn-on Time ta, “WD- VIN 5-if: Four _ 40 80 ns
Fall Time I, o GE 1 t; - 20 40
10as S ttr
Tom-or Time ts _L - 100 200
VIN: tr.lf<5ns VDDTZOOV
D.U$1%(ZOUT=SOQ)
Total Gate Charge (h - 120 240
(%te-Source Plus %te-0rain) VDD = 400V, Ves = -10V, M)
I = 9A
Gate-Source Charge h, D - 70 -
Gate-Drain ("Milled') Charge Ogd - 50 -
Source-Drain Diode Ratings and Characteristics (T a = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse Current la, - - - 9 A
Pulse Drain Reverse Current bee - - - 27 A
Diode Forward Voltage VDSF be = 9A, Ves = 0V - - 20 V
The inlorrreion contained "ere is subject to C'iahge without notice.
The information coataihed "ere‘h is presented only as guice for the apphcatiors o' our products. No responsibiiity is assp med by TOSHIBA for any infringements of salehis or other rights oi the Ihird parties
which may result from ls use. No iicehse s granted by imoiicalim or otherWise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are interded 'or usage (rl general electronic
equipments (office equipment, communeatkon equipment, measuring equipment, domestic aaornrkoetkon, etc.) P ease make sure that you consul with LS before you use these TOSHIBA DVOdJCIS in equip-
menis whytn require high qua ty and/or reliaroility, anc in equipmehis which could have maiorimpact 10 the welfare of human Me (atomic er‘ergy control, spaceship, trafiic sighai, Combustion control, all types
of safety devices, etc.) TOSHIBA cannot accept iiabiiity to any Garage which may occur iii case 1'*ese TOSHIBA products were used in the mentioned equipments without prior consuilatio’v wo' TOSHIBA.
2/2 TOSHIBA CORPORATION
www.ic-phoenix.com
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