2SK1358 ,Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PNThermal CharacteristicsCHARACTERISTIC SYMBOL MAX. UNITThermal Resistance, Channel to Case R 0.833
2SK1358
Trans MOSFET N-CH 900V 9A 3-Pin(3+Tab) TO-3PN
TOSHIBA
Discrete Semiconductors
Field Effect Transistor
Silicon N Channel MOS Type (n-MOS ll.5)
High Speed, High Current DC-DC Converter,
Relay Drive and Motor Drive Applications
Features
q Low Drain-Source ON Resistance
- RDS(ON) = 1-19 (Typ.)
. High Forward Transfer Admittance
- hts l = 4.0S mp.)
q Low Leakage Current
- bss = 300yA (Max.) @ VDS = 720V
. Enhancement-Mode
- Vth = 1.5 _ 3.5V@VDS=1OV, ID =1mA
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT
Drain-Source Voltage VDss 900 V
Drain»Gate Voltage (Res = 20kn) VDGR 900 V
Gale-Source Voltage VGSS :30 V
Drain Current DO b 9 A
Pulse IDP 27
Drain Power Dissipation Po 150 W
(To = 25°C)
Channel Temperature u 150 °C
Storage Temperature Range T519 -55 - 150 oC)
Thermal Characteristics
CHARMTERI8Tl0 SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case Rmmc) 0.833 °C/W
Thermal Resistance, Channel lo Ambient Rm(ch_a) 50 °C/W
This transistor is an electrostatic sensitive device. Please handle with care.
Industrial Applications
2SK1358
Unit in mm
15.9 MAX. 'b3.2k().2
20.0 :t0.3
3.3MAX.
1.0 fgiis
5A 5i0.2
20.5 i0.5
5.4 Si 0.2
rn'-.'
u? , ‘3
. --'"'--_g a?
I. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
1.8MAX.
JEDEC -
EIAJ SC-65
TOSHIBA 2-1601B
Weight : 4.6g
TOSHIBA CORPORATION
2SK1358
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current less VGS = :25V, VDS = 0V - - i100 nA
Drain (Jul-off Current bss hos = 720V, hss = (JV - - 300 WI
Drain-Source Breakdown Voltage V(BR) 053 b =10mA, Vas; = (N 900 - - V
Gate Threshold Voltage " VDs =10V, b =1mA 1.5 _ 3.5 V
Drain-Source ON Resistance RDS (0N) b = 4A, has =10V - l.1 1.4 n
Forward Transfer Admittance lh, l VDS = 20V, ID = 4A 2.0 4.0 - s
Input Capacitance Ciss - 1300 1800
Reverse Transfer Capacitance Crss 25115:; V65 = (hl, - 100 150 pF
Output Capacitance 0055 - 180 260
Rise Time tr - 25 50
Switching Turn-on Time ton VGSlg: ID = 4A VOUT - 40 80
Time Fall Time l E RL = 100n - 20 40 (IS
Trim-off Time u v.- - 100 200
VIN : tr, tf< ics, I VDD'=.400V
Duty-S, 1%, tw = loss
Total Gate Charge (lg - 120 240
(Gate-Source Plus %le-0raiio) VDD = 400V, has =10V,
ate-Source Charge 0gs b = 9A - TO - M)
Gate-Drain ("Miller") Charge di - 50 -
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse Current IDR - - - 9 A
Pulse Drain Reverse Current IDRP - - - 27 A
Diode Forward Voltage VDSF b, = 9A, Vas = (h/ - - 20 V
2/6 TOSHIBA CORPORATION
ID - VDS
COMMON
SOURCE
Tc=25°C
o 4 a 12 16 20 24
DRAIN-SOURCE VOLTAGE vDs (V)
ID - VGS
COMMON SOURCE
A VDs=50V
g Tc=100°C
0 2 4 6 8 10
GATE-SOURCE VOLTAGE VGS (V)
RDS (0N) - ID
COMMON SOURCE
VGs=10V
DRAIN-SOURCE 0N RESISTANCE
3 5 10 30
DRAIN CURRENT ID (A)
DRAIN CURRENT
FORWARD TRANSFER ADMl'I'I‘ANCE
[stl (S)
DRAIN-SOURCE 0N RESISTANCE
2SK1358
ID - VDS
COMMON
SOURCE
Tc=25°C
40 80 120 160 200 240
DRAIN-SOURCE VOLTAGE VDS (V)
lstl - ID
Tc= -65''C
COMMON SOURCE
vDs=5ov
.3 0.5 l 3 5 10 20
DRAIN CURRENT ID (A)
RDS (0N) - Tc
COMMON SOURCE
VGS= 10V
-80 ~40 0 4O 80 120 160
CASE TEMPERATURE Tc (''C)
TOSHIBA CORPORATION
2SK1358
IDR - VDS CAPACITANCE - vos
2 COMMON SOURCE
- 1 Tc=25°C
ttt td
> 0 : COMMON SOURCE
I' 0 Q VGS=0V
E 1 VGS=0, -IV f=1MHz C
© 3 Tc=25''C rss
o -0.2 -0.4 -0.6 -0.8 40 -1.2 -1.4 -1.6 -1.8 0.1 0.3 1 3 10 30 100
DRAIN-SOURCE VOLTAGE vos (v; DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME - ID Vth - Te
COMMON iE
SOURCE COMMON SOURCE
- vDD'=4oov , VDS=10V
E Tc=25 C M ID: lmA
" 10V a'
'x: .1
Fi: ii
.3 tto
t DUTY CYCLES0.5% F
VIN : tr, tf<5ns E
0.5 1 3 10 ho -40 0 40 80 120 160
DRAIN CURRENT ID (A) CASE TEMPERATURE Tc ('0)
p - Te DYNAMIC INPUT/OUTPUT
1 D CHARACTERISTI s
A A COMMON SOURCE
t 2 ID=8A S
Tc=25''C V
f? 8 g
l > Cr
z m VDD=100V
F. < 0
b. g S
l, t >
at g '8
LI) © ttt
ir O D
a. i: T
E C: fe
ti © c
40 80 120 160 200 0 40 80 120 160 200
CASE TEMPERATURE Tc CC) TOTAL GATE CHARGE Qg (n0)
4/6 TOSHIBA CORPORATION
2SK1358
rth - tw
rth (u/ Rth (ch-c)
SINGLE PULSE
IMPEDANCE
Duty =t/T
Rth (ch_c)=0.83'C/W
NORMALIZED TRANSIENT THERMAL
10y 100p lm 10m 100m 1 10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
50“....” . r U' T1111
ID MAX.tPUrSED)).K 1111
Mr- I rlrrrl I\ 's IIIHX
‘19 MAX. N 's 100srsy -
(CONTINUOUS) 's "ss. .
A lo- lmsX
s \ x.
D 5 , Ntmsh
ba 3 's, N
a DC OPERATION N Ns N
ttt (Tc=25°C) 'N
g 1 N, N
E 0 5 N
g . .)k. SINGLE NONREPETITIVE
D 0.3 puts»: Tc=25"C
CURVES MUST BE DERATED 't
0.1 LINEARLY WITH INCREASE
IN TEMPERATURE. vDss MAX.
0.05 l l l I I ll
3 10 so 100 300 1000
DRAIN-SOURCE VOLTAGE VDS (V)
TOSHIBA CORPORATION 5/6
2SK1358
The information contained here iS subject to change without notice.
The information contained herein is presented only as guide for the applications of our products. No responsibility Is assumed by TOSHIBA for any infringements of patents or other rights of the third parties
which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. These TOSHIBA products are intended for usage in general electronic
equipments (office equpment, communication equipment, measuring eqopment, domestic electrification, etc.) Please make sure that you consult with us before you use these TOSHIBA products in eqop-
ments which require high quality and/or reliability, and in equipments which couid have major impact to the welfare of human life (atomic energy control, spaceship, traffic signal, combustion control, all types
of safety devices, etc) TOSHIBA cannot accept liability to any damage which may occur in case these TOSHIBA products were used in the mentioned equipments without prior consultation with TOSHIBA.
6/6 TOSHIBA CORPORATION
www.ic-phoenix.com
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