2SK118 ,Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone ApplicationsApplications High breakdown voltage: V = −50 V GDS High input impedance: I = −1 nA (max) (V ..
2SK1180 , MOSFET
2SK1192 , MOSFET
2SK1194 , VR Series Power MOSFET(230V 0.5A)
2SK1194 , VR Series Power MOSFET(230V 0.5A)
2SK1214 ,N-CHANNEL SILICON POWER F-MOS FETMaintenance/DiscontinuedMaintenance/Discontinued includes following four Product lifecycle stage.pl ..
33990 , Enhanced Class B Serial Transceiver
34050 , INDUCTOR, 1000 μH, 0.90 ADC, BUCK
34050 , INDUCTOR, 1000 μH, 0.90 ADC, BUCK
34051 , INDUCTOR, 1500 μH, 0.62 ADC, BUCK
34063AM , 1.5A STEP-DOWN/STEP-UP/INVERTING DC-DC CONVERTER
34063AM-E1 , 1.5A STEP-DOWN/STEP-UP/INVERTING DC-DC CONVERTER
2SK118
Field Effect Transistor Silicon N Channel Junction Type General Purpose and Impedance Converter and Condenser Microphone Applications
2SK1 18 TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK118 General Purpose and Impedance Converter and Condenser Microphone Applications High breakdown voltage: VGDS = −50 V High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz) Small package
Maximum Ratings (Ta ��� � 25°C)
Electrical Characteristics (Ta ��� � 25°C) NF VDS � 15 V, VGS � 0, RG � 100 k�,
f � 120 Hz
Note: IDSS classification R: 0.3~0.75 mA, O: 0.6~1.4 mA, Y: 1.2~3.0 mA, GR: 2.6~6.5 mA
Unit: mm
Weight: 0.13 g (typ.)
