2SK1120 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) DC .DC Converter and Motor Drive Applications2SK1120 .5 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII ) 2SK1120 DC−DC C ..
2SK1120 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) DC .DC Converter and Motor Drive ApplicationsThermal Characteristics JEITA ― TOSHIBA 2-16C1B Characteristics Symbol Max Unit Weight: 4.6 g (typ. ..
2SK1120 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) DC .DC Converter and Motor Drive ApplicationsApplications Unit: mm Low drain−source ON resistance : R = 1.5 Ω (typ.) DS (ON)High forward t ..
2SK1120 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) DC .DC Converter and Motor Drive ApplicationsApplications Unit: mm Low drain−source ON resistance : R = 1.5 Ω (typ.) DS (ON)High forward t ..
2SK1122 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 ''Cl .
—----—m
_--nu—
Gate to Source Cutoff Voltage Vesmn ..
2SK1123 ,SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta L'''ld 25 ''Cl
CHARACTERISTIC SYMBOL _'!s"/rto,'l'rirEi:s.rlriiii ..
33990 , Enhanced Class B Serial Transceiver
34050 , INDUCTOR, 1000 μH, 0.90 ADC, BUCK
34050 , INDUCTOR, 1000 μH, 0.90 ADC, BUCK
34051 , INDUCTOR, 1500 μH, 0.62 ADC, BUCK
34063AM , 1.5A STEP-DOWN/STEP-UP/INVERTING DC-DC CONVERTER
34063AM-E1 , 1.5A STEP-DOWN/STEP-UP/INVERTING DC-DC CONVERTER
2SK1120
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) DC .DC Converter and Motor Drive Applications
2SK1120 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1120 DC−DC Converter and Motor Drive Applications Low drain−source ON resistance : RDS (ON) = 1.5 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = 300 µA (max) (VDS = 800 V) Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 50
Note 1: Please use devices on condition that the channel temperature is below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 4.6 g (typ.)
