2SK1118 ,N Channel MOS Type(for High Speed/ High Current DC-DC Converter/ Relay Drive and Motor Diver)Thermal CharacteristicsCHARACTERISTIC SYMBOL MAX. UNITThermal Resistance, Channel to Case RM“) 2.77 ..
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2SK1119 ,Field Effect Transistor Silicon N Channel MOS Type (pi-MOSII -5 ) DC .DC Converter and Motor Drive ApplicationsApplications Unit: mm Low drain−source ON resistance : R = 3.0 Ω (typ.) DS (ON)High forward t ..
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34063AM , 1.5A STEP-DOWN/STEP-UP/INVERTING DC-DC CONVERTER
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2SK1118
N Channel MOS Type(for High Speed/ High Current DC-DC Converter/ Relay Drive and Motor Diver)
TOSHIBA
Discrete Semiconductors 23K1118
Field Effect Transistor industrial Applications Unitin mm
Silicon N Channel MOS Type (n-MOS II)
High Speed, High Current DC-DC Converter, 1010.3 353.2202 24:02
Relay Drive and Motor Drive Applications
15:1:0.3
o 4-Volt Gate Drive
. Low Drain-Source ON Resistance
- RDS(ON) = 0-959 (Typ.)
. High Forward Transfer Admittance
- M,, I = 4.0S (Typ.)
. Low Leakage Current
- IDSS = 300PA (Max.) © I/ns = 600V
q Enhancement-Mode
Features
0.75:0.15 '
13.0MIN
2.54:0.25
L2c!is.tt.stue
-Vth=1.5-3.5V@VDs=10MIro--1mA ti -'e's' H
Absolute Maximum Ratings fra = 25°C) 'f,'-, 1' I' I' 1 TE
CHARACTERISTIC SYMBOL RATING UNIT V.
Drain-Source Voltage ms 600 ll
Drain-Gate Voltage (Rss = 20m) VDGR 600 V l.' 5‘ng
Gate-Source Voltage V633 t30 V 3. SOURCE
Drain Current oo b 6 A JEDE C -
Pulse bi, 24
Drain Power Dissipation Po 45 W EIAJ SC-67
(WW TOSHIBA 2-10RIB
Channel Temperature Ta, 150 'T Weight : 1.9g
Storage Temperature Range % -55 - 150 ''0
Thermal Characteristics
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case Rm“) 2.77 "O/W
Thermal Resistance, Channel to Ambient Rmm-a) 62.5 "WW
This transistor is an electrostatic sensitive device. Please handle with care.
TDSHlBA CORPORATION 1/6
D 9097350 DDELS‘iS Ilu, D
This Material Copyrighted By Its Respective Manufacturer
ZSK1118
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current las Vas = El51/, V03 = 0V - - 1:100 nA
Drain (M-ott Current loss Ilos = WN. Ilia = tN - - 300 pA
Oraia-Source Breakdown Voltage V(BR) 055 b = 10rnA, V55 = iN 600 - - ll
Gate Threshold Voltage l/e, hrs = lov, lo = 1mA 1.5 - 3.5 ll
Drain-Souroe ON Resistance Ros (ON) ID = 3A, has -- 10V - 0.95 1.25 n
Forward Transter Admittance MS I vDs = 10v. b =3A 3.0 4.0 - s
Input Capacitance Ciss - 1400 2000
Reverse Transter Capacitance Crss ‘10:;1132/ Ita, = W, - 75 120 pF
Output Capacitance C035 - 250 380
Rise Toe k - 25 50
Switching Turn-on Time tu, VGvan ID = 3A VOUT - 40 BO
Time Fall Tame t, E R1,: mm - 20 40 ns
Turn-otf Time ts, "ti - 85 170
VIN : tr, tf<5na, VDDiz300V
DutyS 1%, tw= 10,118
Total Gate Charge 00 - 56 110
(Gate-Source PIus Gate-Drain) lla, = 400Y, l/ss =1W,
(9ate-S0urce Charge ' ID = 6A - 32 - "C
(iate-Orah (Willis') Charge the - 24 -
Source-Drain Diode Ratings and Characteristics (Ta = 25°C)
CHARACTERISTICS SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse Current log - - - 6 A
Pulse Drain Reverse Current loRp - - - 24 A
Diode Forward voltage vDSF lim = 6A, l/ss = ov - _ -2.0 If
Reverse Recovery Time t" km = 6A, l/ss = 0V - 460 - ns
Reverse Recovered Charge Orr dla/th=100MS - 3.5 - LC
This Material Copyrighted By Its Respective Manufacturer
U H0cr7iilsrl UUBLS‘IE 062 III
TOSHIBA CORPORATION
2SK1118
lD - vos ID - vDs
CoMMoNS0URCE C0MM0NS0URCE
Tct25'C
-.. l0 _ Tc-25’C
cu Q VGS"-5V
2 4 6 8 10 " 20 40 60 80 100
DRAIN-SOURCE VOLTAGE v95 m DRAIN-SOURCE VOLTAGE VDs (V)
ID - Vcs ersl ..... ID
COMMONSOURCE 8 COMMONSOURCE
_ vps=zov Q'': VDS=2°V
e. I'..,
il 'slsCi,?
D 25 t
-65 ta,
o 2 4 s 8 IO .1 on 0.5 1 s s IO
GATE-SoURCEvOLTAGE; Vcs IV, DRAiNCURRENT ID (A)
RDsmN) - ID RDS(0N) - Te
C0MM0NSOUtuW, COMMONSOURCE
3 Tc==25‘C 8 Vcs=IOV
.tf. ti
$8 tlit
2 A Z A
Ct 2 o 2
il 9. 'd 9.
In (I)
0.3 0.5 I 3 5 10 30 -8tr .-40 0 40 80 120 160
DRAHiCURRENT In (A) CASETEMPERATURE Tc cm
"rC2E3HtE2ACMl2FtpC9AA"riC2N 3/6
D 9097250 DUELS‘I? TIR E
This Material Copyrighted By Its Respective Manufacturer
2SK11 18
IDR - VDS CAPACITANCE - vDs
g COMMON
a SOURCE
Tc-25‘C 5
u e, COMMON
E n. SOURCE
E U Vcs=u
E [slMHz
g vcs=o. -lV Tem21PG
-0.4 .-0.8 .-1.g -t.6 4.0 -24 -23 -33 0.1 0.3 1 a 10 so 100
DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE vos (V)
SWITCHING TIME - ID Vth - Te
F--- DUTY CYCLES0. sea lt Von te. COMMON SOURCE
"ossto: tr, lf<5nl s VDS‘10A
E , . lOV-[_LV)NE M [DalmA
v tt N Sir o
" "s. bd '
M l " "
E 60- kn ..- iii,
E, 3 i, ‘\ " COMMON g
g te S, / SOURCE =
w - m.,.....-----" _ vnp=aoov ,
Tc=25‘C a
0.3 0.5 t 3 6 10 30 tro -80 -40 0 " 80 120 160
DRAIN CURRENT ID (A) CASE TEMPERATURE Te re)
DYNAMIC INP T
ARA U IOUTPUT PD - Te
COMMON
SOURCE
Tc=25'C
VDD=I2OV
mumsouncs VOLTAGE VDs (V)
cmasouncs VOLTAGE Vcs (V)
0mm rowan mssmmon p0 (W)
20 40 60 80 l 40 80 120 160 200
TOTAL GATE CHARGE Q5 Inc) CASE TEMPERATURE Te CC)
4/6 TOSHIBA CORPORATION
III 3097250 DDELSHB RSS D
This Material Copyrighted By Its Respective Manufacturer
ZSK1118
rth - tw
SINGLE PULSE PDM
I t L., I
INPEDANCB Im(lflflu‘ m”)
Duty " t I T
Ru. (ch-c)= 2.77‘0 I W
N ORMAUZED TRANSIENT THERMAL
los, 100/1 1m ' 10m 100m 1 10
PULSE WIDTH tw (l)
SAFE OPERATING AREA
19 MAXJPULSEDME loopax -
10,403!
ID MAX.
1 (CONTINUOUS)
DC OPERATION
(Tc-25’C)
mum cumm' ID (A)
x SINGLE NONREPETITIVE
PULSE Tc=25'C
CURVES MUST BE DERATED
LINEARLY wrrH INCREASE m
TEIMPERATURE, Vnss MAX,
5 10 30 100 300 1000
DRAIN-SOURCE VOLTAGE VDS (V)
TOSHIBA CORPORATION 5/6
D ‘10‘17250 0021.59“! 8n1, D
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