2SK1062 ,Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface ApplicationsApplications Excellent switching time: t = 14 ns (typ.) on High forward transfer admittance: ..
2SK1065 ,High-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitGate to Drain Voltage VGDO - 20 VGate Current lo 10 mADra ..
2SK1066 ,High-Frequency General-Purpose Amp ApplicationsAbsolute Maximum Ratings at Ta = 25"C unitDrain to Source Voltage VDSX 15 VGate to Drain Voltage VG ..
2SK1068 ,Impedance Conversion ApplicationsAbsolute Maximum Ratings at Ta = 25°C unitDrain to Source Voltage Fhsi 40 VGate to Drain Voltage VG ..
2SK1069 ,N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier ApplicationsOrdering number:EN2749N-Channel Junction Silicon FET2SK1069Low-FrequencyGeneral-Purpose Amplifier A ..
2SK1070PICTL-E , Silicon N-Channel Junction FET
3364W-1-103E , 4 mm Square Trimming Potentiometer
3364W-1-103E , 4 mm Square Trimming Potentiometer
33661 ,LIN Enhanced Physical Interfacefeatures of CAN are not required. The 33661 is a Physical Layer component dedicated to automotive L ..
33990 , Enhanced Class B Serial Transceiver
34050 , INDUCTOR, 1000 μH, 0.90 ADC, BUCK
34050 , INDUCTOR, 1000 μH, 0.90 ADC, BUCK
2SK1062
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
2SK1062 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK1062 High Speed Switching Applications
Analog Switching Applications
Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Yfs| = 100 mS (min) @ID = 50 mA Low on resistance: RDS (ON) = 0.6 Ω (typ.) @ ID = 50 mA Enhancement-mode Complementary to 2SJ168
Maximum Ratings (Ta ��� � 25°C) Tstg
Marking Unit: mm
Weight: 0.012 g (typ.)
