2SJ669 ,Power MOSFET (P-ch single)
2SJ76 , Silicon P Channel MOS FET
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2SK1006 ,N-CHANNEL SILICON POWER MOSFETApplications ' 3 Source
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2SK1006-01MR ,N-CHANNEL SILICON POWER MOSFETFeatures
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2SK1008-01 ,N-CHANNEL SILICON POWER MOSFETApplications
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3350 , FLAT WASHERS – NYLON & FIBRE
3359P-1-103 , 3/8" ROUND/SINGLE-TURN/CERMENT INDUSTRIAL/OPEN FRAME
3361P-1-103G , 3361 - 1/4 Square SMD Trimpot Trimming Potentiometer
3361P-1-204GLF , 3361 - 1/4 Square SMD Trimpot Trimming Potentiometer
3362P-104 , 7×7.2 Square/Single Turn/Trimming Potentiometer
3362P-104 , 7×7.2 Square/Single Turn/Trimming Potentiometer
2SJ669
Power MOSFET (P-ch single)
2SJ669 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U−MOS III)
2SJ669 Relay Drive, DC/DC Converter and Motor Drive
Applications 4-V gate drive Low drain-source ON-resistance: RDS (ON) = 0.12 Ω (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = −100 μA (max) (VDS = −60 V) Enhancement mode: Vth = −0.8 to −2.0 V
(VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics Unit °C / W
Note 1: The channel temperature should not exceed 150℃ during use.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
Weight: 0.54 g (typ.)
