2SJ648 ,P-Channel enhancement MOS FET for load swFEATURES 2 1• 2.5 V drive available • Low on-state resistance +0.10.2–0 RDS(on)1 = 1.45 Ω MAX. ( ..
2SJ649 , MOS FIELD EFFECT TRANSISTOR
2SJ650 ,High Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ651 ,High Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ651 ,High Output MOSFETsFeatures Package Dimensions•Low ON-resistance.unit : mm•Ultrahigh-speed switching.2063A•4V drive.[2 ..
2SJ652 ,High Output MOSFETsMaximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage V --60 VD ..
33468-0001 , 2.54mm (.100") Pitch MX64™ Terminal, Tin (Sn) Plating, 22 AWG, Right Reel PayoffAlso used with MX123™ Female Receptacle Housing
3350 , FLAT WASHERS – NYLON & FIBRE
3359P-1-103 , 3/8" ROUND/SINGLE-TURN/CERMENT INDUSTRIAL/OPEN FRAME
3361P-1-103G , 3361 - 1/4 Square SMD Trimpot Trimming Potentiometer
3361P-1-204GLF , 3361 - 1/4 Square SMD Trimpot Trimming Potentiometer
3362P-104 , 7×7.2 Square/Single Turn/Trimming Potentiometer
2SJ648