2SJ620 ,Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
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2SJ621 ,Pch enhancement type MOS FETFEATURES1• 1.8 V drive available 2• Low on-state resistanceRDS(on)1 = 44 mΩ MAX. (VGS = –4.5 V, ID ..
2SJ621-T1B ,Pch enhancement type MOS FETfeatures a low on-state resistance and excellentswitching characteristics, and is suitable for
2SJ624 ,Pch enhancement type MOS FETFEATURES12• 1.8 V drive available• Low on-state resistance0.65RDS(on)1 = 54 mΩ MAX. (VGS = –4.5 V, ..
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33390 ,Class B Serial TransceiverFeatures• Designed for SAE J-1850 Class B Data Rates• Full Operational Bus Dynamics Over a Supply V ..
33468-0001 , 2.54mm (.100") Pitch MX64™ Terminal, Tin (Sn) Plating, 22 AWG, Right Reel PayoffAlso used with MX123™ Female Receptacle Housing
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3359P-1-103 , 3/8" ROUND/SINGLE-TURN/CERMENT INDUSTRIAL/OPEN FRAME
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2SJ620
Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SJ620 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 -π-MOSV)
2SJ620 Switching Regulator and DC-DC Converter Applications
Motor Drive Applications 4-V gate drive Low drain-source ON resistance: RDS (ON) = 63 mΩ (typ.) High forward transfer admittance: |Yfs| = 15 S (typ.) Low leakage current: IDSS = −100 µA (max) (VDS = −100 V) Enhancement-model: Vth = −0.8 to −2.0 V (VDS = −10 V , ID = −1 mA)
Maximum Ratings (Ta ��� � 25°C)
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD � �50 V, Tch � 25°C (initial), L � 3.56 mH, RG � 25 �,
IAR � �18 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
Weight: 0.74 g (typ.)
Circuit Configuration
