2SJ610 ,Field Effect Transistor Silicon P Channel MOS Type (pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive Applications
2SJ612 ,Medium Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ613 ,Medium Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ615 ,Medium Output MOSFETsAbsolute Maximum Ratings at Ta=25°CParameter Symbol Conditions Ratings UnitDrain-to-Source Voltage ..
2SJ620 ,Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
2SJ621 ,Pch enhancement type MOS FETDATA SHEETMOS FIELD EFFECT TRANSISTOR 2SJ621P-CHANNEL MOS FIELD EFFECT TRANSISTORFOR SWITCHINGD ..
33390 ,Class B Serial TransceiverFeatures• Designed for SAE J-1850 Class B Data Rates• Full Operational Bus Dynamics Over a Supply V ..
33468-0001 , 2.54mm (.100") Pitch MX64™ Terminal, Tin (Sn) Plating, 22 AWG, Right Reel PayoffAlso used with MX123™ Female Receptacle Housing
3350 , FLAT WASHERS – NYLON & FIBRE
3359P-1-103 , 3/8" ROUND/SINGLE-TURN/CERMENT INDUSTRIAL/OPEN FRAME
3361P-1-103G , 3361 - 1/4 Square SMD Trimpot Trimming Potentiometer
3361P-1-204GLF , 3361 - 1/4 Square SMD Trimpot Trimming Potentiometer
2SJ610
Field Effect Transistor Silicon P Channel MOS Type (pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive Applications
2SJ610 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
2SJ610 Switching Regulator, DC-DC Converter and Motor Drive Applications Low drain-source ON resistance: RDS (ON) = 1.85 Ω (typ.) High forward transfer admittance: |Yfs| = 18 S (typ.) Low leakage current: IDSS = −100 µA (VDS = −250 V) Enhancement-mode: Vth = −1.5~−3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc ��� � 25°C) Tstg
Thermal Characteristics Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD � �50 V, Tch � 25°C (initial), L � 75 mH, IAR � �2.0 A,
RG � 25 �
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
Weight: 0.36 g (typ.)
