2SJ509 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SJ509 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SJ517 , Silicon P Channel MOS FET High Speed Power Switching
2SJ517 , Silicon P Channel MOS FET High Speed Power Switching
2SJ517 , Silicon P Channel MOS FET High Speed Power Switching
2SJ517YYTL-E , Silicon P Channel MOS FET
3323P-104 , 7×7 Square/ Single Turn /Trimming Potentiometer
3323P-104 , 7×7 Square/ Single Turn /Trimming Potentiometer
3323P-104 , 7×7 Square/ Single Turn /Trimming Potentiometer
33390 ,Class B Serial TransceiverFeatures• Designed for SAE J-1850 Class B Data Rates• Full Operational Bus Dynamics Over a Supply V ..
33468-0001 , 2.54mm (.100") Pitch MX64™ Terminal, Tin (Sn) Plating, 22 AWG, Right Reel PayoffAlso used with MX123™ Female Receptacle Housing
3350 , FLAT WASHERS – NYLON & FIBRE
2SJ509
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SJ509 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 −π−MOSV)
2SJ509 Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 1.35 Ω (typ.) High forward transfer admittance : |Yfs| = 0.7 S (typ.) Low leakage current : IDSS = −100 µA (max) (VDS = −100 V) Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 138
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = −50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 Ω, IAR = −1 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.36 g (typ.)
