2SJ465 ,DC .DC Converter, Relay Drive and Motor Drive Applications
2SJ473-01L ,Power MOSFETApplications T forSwitching
4.0utview K-Pack L-Type : Outview See to 5/13 page
S-Type : Outview ..
2SJ473-01S ,Power MOSFETApplications T forSwitching
4.0utview K-Pack L-Type : Outview See to 5/13 page
S-Type : Outview ..
2SJ476-01L ,Power MOSFETSPECIFICATION
DEVICE NAME : Power MOSFET
TYPE NAME 2SJ476-01L,S
SPEC. NO.
Fuji Electric Co.,L ..
2SJ477-01MR ,Power MOSFETApplications for Switching
4.0utview _ TO-220F Outview See to 5/12 page
5.Absolute Maximum Ra ..
2SJ484WYTL-E , Silicon P Channel MOS FET
3314G-1-503E , 3314 - 4 mm Square Trimpot® Trimming Potentiometer
3314G-1-503E , 3314 - 4 mm Square Trimpot® Trimming Potentiometer
3314J-1-101E , 3314 - 4 mm Square Trimpot® Trimming Potentiometer
3314J-1-101E , 3314 - 4 mm Square Trimpot® Trimming Potentiometer
3314J-1-103E , 3314 - 4 mm Square Trimpot® Trimming Potentiometer
3314J-1-201E , 3314 - 4 mm Square Trimpot® Trimming Potentiometer
2SJ465
DC .DC Converter, Relay Drive and Motor Drive Applications
2SJ465 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 −π−MOSV)
2SJ465 DC−DC Converter, Relay Drive and Motor Drive Applications 2.5 V gate drive Low drain−source ON resistance : RDS (ON) = 0.54 Ω (typ.) High forward transfer admittance : |Yfs| = 1.7 S (typ.) Low leakage current : IDSS = −100 µA (max)
(VDS = −16 V) Enhancement−mode : Vth = −0.5~−1.1 V
(VDS = −10 V, ID = −200 µA)
Maximum Ratings (Ta = 25°C) Tstg
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Thermal Characteristics Rth (ch−a) 250
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.05 g (typ.)
(The two digits represent
the part number.)
Marking
