2SJ380 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SJ380 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SJ381 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta =25°C unitDrain-to-Source Voltage VDSS - 12 VGate-to-Source Voltage ..
2SJ382 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25''CDrain-to-Source VoltageGate-to-Source VoltageDrain Current (D ..
2SJ383 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta =25°C unitDrain-to-Source Voltage VDSS - 12 VGate-to-Source Voltage ..
2SJ383 ,Ultrahigh-Speed Switching ApplicationsOrdering number: EN 5297AMJ 383P-Channel MOS Silicon FETNo.5297AUltrahigh-Speed Switching Applicati ..
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer
2SJ380
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
TOSHIBA 2SJ380
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-ar-MOSV)
2SJ380
RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE Unit in mm
APPLICATIONS
4V Gate Drive
Low Drain-Source ON Resistance : RDS(ON) = 0.15 f) (Typ.)
High Forward Transfer Admittance : |st| = 7.7 S (Typ.)
Low Leakage Current : IDSS = -100pA(Max.) (VDS = -100V)
Enhancement-Mode .' Vth = -0.8-- -2.0V
(VDS = -10V, ID = -lmA)
110MW.
2.5tC+.0.25
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT gi- :[E 2
Drain-Source Voltage VDSS -100 V 1
Drain-Gate Voltage (RGS = 20 k0) VDGR -100 V l.' §ng 3
Gate-Source Voltage VGSS :20 V 3: SOURCE
DC (Note 1) ID -12 A
. JEDEC -
Drain Current Pulse (Note 1) IDP -48 A
Drain Power Dissipation (Tc = 25°C) PD 35 W JEITA SC-67
. TOSHIBA 2-10R1B
Single Pulse Avalanche Energy EAS 312 m J .
(Note 2) Weight : 1.9g (Typ.)
Avalanche Current IAR -12 A
Repetitive Avalanche Energy
(Note 3) EAR 3.5 mJ
Channel Temperature Tch 150 T
Storage Temperature Range Tstg -55--150 T
THERMAL CHARACTERISTICS
CHARACTERISTIC SYMBOL MAX. UNIT
Thermal Resistance, Channel to Case Rth(ch-c) 3.57 °C/ W
Thermal Resistance, Channel to Ambient Rth (ch-a) 62.5 °C/ W
(Note 1) : Please use devices on condition that the channel temperature is below 150°C.
(Note 2) : VDD = -25 V, Tch = 25°C (initial), L = 2.94 mH, RG = 25 n, IAR = -12A
(Note 3) : Repetitive rating ; Pulse Width Limited by maximum junction temperature.
This transistor is an electrostatic sensitive device.
Please handle with caution.
1 2002-08-14
TOSHIBA 251380
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Leakage Current IGSS VGS = i16 V, VDS = 0 V - - i 10 PA
Drain Cut-off Current IDSS VDS = -100V, VGS = 0V - - -100 PA
Drain-Source Breakdown
Voltage V (BR) DSS ID - -10mA, VGS - 0V -100 - - V
Gate Threshold Voltage Vth VDS = -10V, ID = -1 mA -0.8 - -2.0 V
V = -4V, I = -6A - 0.25 0.32
Drain-Source ON Resistance RDS (ON) GS D
VGS = -10V, ID = -6A - 0.15 0.21
Forward Transfer
Admittance lyfsl VDS - -10 V, ID - -6A 4.5 7.7 - S
Input Capacitance Ciss - 1100 -
Reverse Transfer VDS = -10 V, VGS = 0 V
Capacitance Crss f = 1 MHz - 200 - pF
Output Capacitance Coss - 440 -
Rise Time tr ID = -6A - 18 -
VGS 0V U Vout
- 10 V
Turn-on Time t 1 = - 30 -
Switching on Cc: RL
. o 8.3 n ns
Time 10
Fall Time tf - 18 -
VDD = -50 V
Turn-off Time toff Duty s 1%, tw = 10ps - 65 -
Total Gate Charge (Gate-
. Qg . - 48 -
Source Plus Gate-Drain) VDD =. -80 V, VGS = -10V C
Gate-Source Charge Qgs ID = -12A - 29 - n
Gate-Drain ("Mi1ler") Charge di - 19 -
SOURCE-DRAIN RATINGS AND CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Continuous Drain Reverse
Current (Note 1) IDR - - - -12 A
Pulse Drain Reverse Current
(Note 1) IDRP - - - -48 A
Forward Voltage (Diode) VDSF IDR = -12A, VGS = 0V - - 1.7 V
Reverse Recovery Time trr IDR = -12 A, VGS = 0 V - 160 - ns
Reverse Recovery Charge er dIDR/ dt = 50 A/ ps - 0.5 - PC
MARKING
T X Lot Number
J380 -- TYPE .
I I Cl- Month (Starting from Alphabet A)
U U L] Year (Last Number of the Christian Era)
2 2002-08-14
TOSHIBA
DRAIN CURRENT ID (A) DRAIN CURRENT ID
FORWARD TRANSFER ADMITTANCE
[st' (S)
ID - VDS
MMON SOURCE
Vgs= -2V
0 -0.4 -0.8 -1.2 -1.6 -2.0
DRAIN-SOURCE VOLTAGE VDS (V)
0 ID - VGS
COMMON SOURCE
VDS = -10 v
PULSE TEST
Tc = -55T
0 -1 -2 -3 -4 -5 -6
GATE-SOURCE VOLTAGE VGS (V)
lstl - ID
COMMON SOURCE
VDS = - 10 v
PULSE TEST
-0.3 -1.0 -3 -10 -20
DRAIN CURRENT ID (A)
DRAIN CURRENT ID
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE 0N RESISTANCE
RDS<0N> <9)
ID - VDS
COMMON SOURCE
-6 c = 25°C
PULSE TEST
VGS = -2 V
-2 -4 -6 -8 -10
DRAIN-SOURCE VOLTAGE VDS (V)
VDS - VGS
COMMON SOURCE
Tc = 25°C
PULSE TEST
-4 -8 -12 -16 -20
GATE-SOURCE VOLTAGE sz (V)
RDS(0N) - ID
COMMON SOURCE
Te = 25''C
1.0 PULSE TEST
-0.3 -1.0 -3 -10 -20
DRAIN CURRENT ID (A)
TOSHIBA
DRAIN-SOURCE ON RESISTANCE
RDS (ON)
CAPACITANCE C (pF)
DRAIN POWER DISSIPATION PD
RDS (ON) - Te
COMMON SOURCE
PULSE TEST ID = -8A
VGS = - 10 V
- 80 - 40 0 40 80 120 160
CASE TEMPERATURE Tc (°C)
CAPACITANCE - VDS
COMMON SOURCE
100 VGs = 0 V
f = 1 MHz
50 Te = 25°C
-0.1 -0.3 -1 -3 -10 -30 -100
DRAIN-SOURCE VOLTAGE VDS (V)
20 'N,
10 "ss,
o 40 80 120 160
CASE TEMPERATURE Tc (°C)
DRAIN REVERSE CURRENT IDR (A)
GATE THRESHOLD VOLTAGE Vth (V)
DRAIN-SO URCE VOLTAGE VDS
IDR - VDS
COMMON SOURCE
Te = 25°C
PULSE TEST
0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE Te (°C)
DYNAMIC INPUT/OUTPUT
CHARACTERISTICS
COMMON SOURCE
ID = - 12 A -8
To = 25°C
PULSE TEST
Vth - Te
COMMON SOURCE
VDS = - 10 V
ID = - 1 mA
PULSE TEST
'_.....,
"m'-'---..,..,
-40 0 40 80 120 160
GATE-SOURCE VOLTAGE Vcs (V)
20 40 60 80 100
TOTAL GATE CHARGE Qg (nC)
TOSHIBA
DRAIN CURRENT ID (A)
IMPEDANCE rth (t)/Rth (ch-c)
NORMALIZED TRANSIENT THERMAL
10 ,u 100 y 1 m
0.03 SINGLE PULSE
PDMI I I I I
Duty = t/T
Rth(eh-c) = 3.57°C/W
10m 100m 1 10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
ID MAX. (PULSED) lk.
100 /rs)K
ID MAX. 1 ms)k.
(CONTINUOUS) I
DC OPERATION
Tc = 25°C
X SINGLE
-0.5 NONREPETITIVE
PULSE Tc = 25"C
Curves must be derated
linearly with increase in
VDSS MAX.
temperature.
-1 -3 -10 -30 -100 -300
DRAIN-SOURCE VOLTAGE VDS (V)
EAS - Teh
AVALANCHE ENERGY EAS (mJ)
25 50 75 100 125 150
CHANNEL TEMPERATURE (INITIAL) Tch (°C)
-15V / N
C) m I /
VDD / l VDS
L \___
TEST CIRCUIT WAVE FORM
VDD = -25 V, L = 2.94 mH 2 BVDSS - VDD
5 2002-08-14
TOSHIBA 251380
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
6 2002-08-14
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