2SJ378 ,Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSV) Relay Drive, DC .DC Converter and Motor Drive Applications
2SJ378 ,Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSV) Relay Drive, DC .DC Converter and Motor Drive Applications
2SJ380 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SJ380 ,TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2-PI-MOSV) RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS
2SJ381 ,Ultrahigh-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta =25°C unitDrain-to-Source Voltage VDSS - 12 VGate-to-Source Voltage ..
2SJ382 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25''CDrain-to-Source VoltageGate-to-Source VoltageDrain Current (D ..
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer
2SJ378
Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSV) Relay Drive, DC .DC Converter and Motor Drive Applications
2SJ378 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 −π−MOSV)
2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance : |Yfs| = 4.0 S (typ.) Low leakage current : IDSS = −100 µA (max) (VDS = −60 V) Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C) Tstg
Thermal Characteristics Rth (ch−a) 96.1
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = −25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 Ω, IAR = −5 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.54 g (typ.)
