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2SJ360
Field Effect Transistor Silicon P Channel MOS Type (L2-MOSV) Chopper Regulator, DC .DC Converter and Motor Drive Applications
2SJ360 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 −π−MOSV)
2SJ360 Chopper Regulator, DC−DC Converter and Motor Drive Applications 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.55 Ω (typ.) High forward transfer admittance : |Yfs| = 0.9 S (typ.) Low leakage current : IDSS = −100 µA (max) (VDS = −60 V) Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C) Note 1: Please use devices on condition that the channel temperature is
below 150°C.
Note 2: Mounted on ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Thermal Characteristics Rth (ch−a) 250
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.05 g (typ.)
(The two digits represent
the part number.)
Marking
