2SJ326-Z-E1 ,P-channel enhancement typeELECTRICAL CHARACTERISTICS (Ta = 25 °C). "
CHARACTERISTIC
Drain to Source On-state Resistance ..
2SJ327 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES
q Low On-state Resistance
RDS(on) = 0.13 n TYP. (VGS = -10 V, ID = --2 A)
RDS(on) = 0.2 ..
2SJ327-Z-E1 ,P-channel enhancement typeELECTRICAL CHARACTERISTICS (Ta = 25 °C)
CHARACTERISTIC SYMBOL m- MAX. UNIT TEST CONDITIONS
Drai ..
2SJ327-Z-E1 ,P-channel enhancement typeapplications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 °C)
Drain to Source Voltage VDSS --60 V
Ga ..
2SJ327-Z-E2 ,P-channel enhancement typeFEATURES
q Low On-state Resistance
RDS(on) = 0.13 n TYP. (VGS = -10 V, ID = --2 A)
RDS(on) = 0.2 ..
2SJ328 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USENEC ZSJ328, ZSJ328-Z
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer
2SJ326-Z-E1
