2SJ325-Z-E2 ,P-channel enhancement typeFEATURES
C....; q Low On-state Resistance
RDS(on) Tr-' 83' mn TYP. (VGs = -10 V, ID = -2 A)
RD ..
2SJ325-Z-T2 ,P-channel enhancement typeapplications.
ABSOLUTE MAXIMUM RATINGS (Ta IL".' 25 °C)
Drain to Source Voltage Voss V -30 V
..
2SJ326 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C). "
CHARACTERISTIC
Drain to Source On-state Resistance ..
2SJ326-Z ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEapplications.
ABSOLUTE MAXIMUM RATINGS (Ta '.rr. 25 °C)
Drain to Source Voltage Voss ~60 V
G ..
2SJ326-Z-E1 ,P-channel enhancement typeELECTRICAL CHARACTERISTICS (Ta = 25 °C). "
CHARACTERISTIC
Drain to Source On-state Resistance ..
2SJ327 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEFEATURES
q Low On-state Resistance
RDS(on) = 0.13 n TYP. (VGS = -10 V, ID = --2 A)
RDS(on) = 0.2 ..
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer
2SJ325-Z-E1-2SJ325-Z-E2-2SJ325-Z-T2
