2SJ316 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°CDrain to Source VoltageGate to Source VoltageDrain Current(DC) ..
2SJ317NYTL-E , Silicon P Channel MOS FET
2SJ324 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PA
Gate to Source Leakage Current less i10 VGS = T16 ..
2SJ324-Z-E1 ,P-channel enhancement typeELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PA
Gate to Source Leakage Current less i10 VGS = T16 ..
2SJ325 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS fr, 'xi its TI l
TEST CONDITIONS .
VGS = ~10 V, ID = -2.0 A
Ws = -4 ..
2SJ325-Z-E1 ,P-channel enhancement typeFEATURES
C....; q Low On-state Resistance
RDS(on) Tr-' 83' mn TYP. (VGs = -10 V, ID = -2 A)
RD ..
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer
2SJ316
