2SJ315 ,Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSIV) DC-DC Converter
2SJ316 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°CDrain to Source VoltageGate to Source VoltageDrain Current(DC) ..
2SJ317NYTL-E , Silicon P Channel MOS FET
2SJ324 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PA
Gate to Source Leakage Current less i10 VGS = T16 ..
2SJ324-Z-E1 ,P-channel enhancement typeELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PA
Gate to Source Leakage Current less i10 VGS = T16 ..
2SJ325 ,SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USEELECTRICAL CHARACTERISTICS fr, 'xi its TI l
TEST CONDITIONS .
VGS = ~10 V, ID = -2.0 A
Ws = -4 ..
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
3313J-1-503E , 3313 - 3 mm Trimpot Trimming Potentiometer
2SJ315
Field Effect Transistor Silicon P Channel MOS Type (L2-pi-MOSIV) DC-DC Converter
2SJ315 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2 −π−MOSIV)
2SJ315 DC−DC Converter
FEATURES 4− Volt gate drive Low drain−source ON resistance : RDS (ON) = 0.25 Ω (typ.) High forward transfer admittance : |Yfs| = 3.0 S (typ.) Low leakage current : IDSS = −100 µA (max) (VDS = −60 V) Enhancement−mode : Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Thermal Characteristics Rth (ch−a) 125
Note 1: Please use devices on condition that the channel temperature is
below 150°C.
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 0.36 g (typ.)
