2SJ210-T1B ,P-channel MOS FETELECTRICAL CHARACTERISTICS (Ta = 25 oC)
CHARACTERISTIC SYMBOL . . . CONDITIONS
Drain Cut-off ..
2SJ210-T2B ,P-channel MOS FETapplications.
N e Gate(G)
Source(S)
(Diode in the figure is the parasitic diode.)
ABSOLUTE ..
2SJ211 ,P-CHANNEL MOS FET FOR SWITCHINGMOS 'iii''"'",''')"';'",']''"';:":""') EFFECT TRANSISTOR
2Sd21 1
P-CHANNEL MOS FET
FOR SWITC ..
2SJ211-T1B ,P-channel MOS FETMOS 'iii''"'",''')"';'",']''"';:":""') EFFECT TRANSISTOR
2Sd21 1
P-CHANNEL MOS FET
FOR SWITC ..
2SJ212 ,P-CHANNEL MOS FET FOR SWITCHINGFEATURES
0 Directly driven by ICs having a 5 V power supply.
0 Has low on-state resistance
RDS ..
2SJ212 ,P-CHANNEL MOS FET FOR SWITCHINGapplications.
(Diode in the figure is the parasitic diode.)
ABSOLUTE MAXIMUM RATINGS (Ta = 25 " ..
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
2SJ210-T1B-2SJ210-T2B
