2SJ205-T1 ,MOS field effect transistorELECTRICAL CHARACTERISTICS (Ta trr... 25 oC)
PARAMETER SYMBOL
2Sd 205
TEST CON DITIONS
..
2SJ206 ,P-CHANNEL MOS FET FOR SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..
2SJ206-T1 ,P-channel MOS FETELECTRICAL CHARACTERISTICS (Ta = 25 °C)
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..
2SJ207 ,P-CHANNEL MOS FET FOR SWITCHINGFEATURES
V“ H
O
f, O Directly driven by le having a 3 V power supply.
rt,, 0 Not necessary to ..
2SJ207-T1 ,MOS field effect transistorFEATURES
V“ H
O
f, O Directly driven by le having a 3 V power supply.
rt,, 0 Not necessary to ..
2SJ208 ,P-CHANNEL MOS FET FOR SWITCHINGFEATURES
0 Directly driven by ICs having a 3 V power supply.
. Not necessary to consider drivin ..
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
2SJ205-T1
