2SJ201 ,Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
2SJ201 ,Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
2SJ202 ,P-CHANNEL MOS FET FOR SWITCHINGVrrc'rr.iFmw'erPttm'it'NtMsrteir'-'it"er__Pkr _ M A»; --..
m.g-
=vm1 1"ums"‘m<,m¢1 wtwgmtht'w ..
2SJ202-T1 ,MOS field effect transistorVrrc'rr.iFmw'erPttm'it'NtMsrteir'-'it"er__Pkr _ M A»; --..
m.g-
=vm1 1"ums"‘m<,m¢1 wtwgmtht'w ..
2SJ203 ,P-channel MOS FETELECTRICAL CHARACTERISTICS (TA= 25 °C)
CHARACTERISTIC SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
D ..
2SJ204 ,P-CHANNEL MOS FET FOR SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 ''C)
2Sd 204
TEST CONDITIONS
Drain Cut-off Current
..
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
2SJ201
Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
2SJ201 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ201 High Power Amplifier Application High breakdown voltage : VDSS = −200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530
Maximum Ratings (Ta = 25°C)
Marking
Electrical Characteristics (Ta = 25°C) Crss VDS = −30 V, VGS = 0, f = 1 MHz ―
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VGS (OFF) Classification O: −0.8~−1.6, Y: −1.4~−2.8
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
Weight: 9.75 g (typ.)
