2SJ199-T1 ,P-channel MOS FETapplications.
Source(S)
(Diode in the figure is the parasitic diode.)
ABSOLUTE MAXIMUM RATIN ..
2SJ199-T1 ,P-channel MOS FETFEATURES
. Directly driven by le having a 5 V power supply.
0 Has low on-state resistance
RDS( ..
2SJ200 ,Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
2SJ200 ,Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
2SJ201 ,Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
2SJ201 ,Field Effect Transistor Silicon P Channel MOS Type High Power Amplifier Application
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
2SJ199-T1
