2SJ178 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGFEATURES
. Low ON-state resistance
RDSM = 1.5 n MAX. at VGS = --4 v, ID 'LT: -0.5 A
RDSM = 1 ..
2SJ179 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGFEATURES
q Directly driven by le having a 5 V power supply.
0 Has low on-state resistance
RDS( ..
2SJ185 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGapplications.
1.1 to 1.4
1. Source
2. Gate
3. Drain
MARK :H12
Source(S)
(Diode in ..
2SJ187 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta=25°C unitDrain to Source Voltage Vnss - 30 VGate to Source Voltage K ..
2SJ188 ,Very High-Speed Switching ApplicationsFeatures. Low ON resistance. Very high-speed switching. Low-voltage driveDrain to Source VoltageGat ..
2SJ188 ,Very High-Speed Switching ApplicationsAbsolute Maximum Ratings at Ta = 25°CVDSSKassInIm,PDTeh _Tstg
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
2SJ178
