2SJ168 ,Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
2SJ168 ,Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
2SJ168 ,Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
2SJ172 , Silicon P-Channel MOS FET
2SJ172 , Silicon P-Channel MOS FET
2SJ175 , Silicon P-Channel MOS FET
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
2SJ168
Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
2SJ168 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ168 High Speed Switching Applications
Analog Switch Applications
Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Yfs| = 100 mS (min) @ID = −50 mA Low on resistance: RDS (ON) = 1.3 Ω (typ.) @ ID = −50 mA Enhancement-mode Complementary to 2SK1062
Maximum Ratings (Ta ��� � 25°C) Tstg
Note: This transistor is the electrostatic sensitive device. Please handle with caution.
Marking Unit: mm
Weight: 0.012 g (typ.)
