2SJ148 ,Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
2SJ162-E , Silicon P Channel MOS FET
2SJ164 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max Unit*Drain to Source ..
2SJ165 ,P-CHANNEL MOS FET FOR SWITCHING-i''ij'i-'?j"""ii' FIELD. EFFECT 'TRANSISTOR
2SJll 65
P-CHANNEL MOS FET
FOR SWITCHING
“Wm ..
2SJ166 ,P-CHANNEL MOS FET FOR HIGH SPEED SWITCHINGELECTRICAL CHARACTERISTICS (Ta = 25 0C)
PARAMETER SYMBOL . . . TEST CONDITIONS
Drain Cut-off ..
2SJ168 ,Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-502E , Trimpot Trimming Potentiometer Plastic housing for RF applications
2SJ148
Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
2SJ148 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ148 High Speed Switching Applications
Analog Switch Applications
Interface Applications Excellent switching time: ton = 14 ns (typ.) High forward transfer admittance: |Yfs| = 100 mS (min) Low on resistance: RDS (ON) = 1.3 Ω (typ.) Enhancement-mode Complementary to 2SK982
Maximum Ratings (Ta ��� � 25°C) Tstg
Unit: mm
Weight: 0.21 g (typ.)
