2SJ109 ,P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS)
2SJ109 ,P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS)
2SJ113 , SILICON P-CHANNEL MOS FET
2SJ113 , SILICON P-CHANNEL MOS FET
2SJ113 , SILICON P-CHANNEL MOS FET
2SJ117 , Silicon P-Channel MOS FET
32F8030-CN , Programmable Electronic Filter
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
2SJ109
P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS)
TOSHIBA 251109
TOSHIBA FIELD EFFECT TRANSISTOR SILICON MONOLITHIC P CHANNEL JUNCTION TYPE
2Sril09
LOW NOISE AUDIO AMPLIFIER APPLICATIONS Unit in mm
DIFFERENTIAL AMPLIFIER APPLICATIONS ”15;,“
sr?,.! l
0 1 Chip Dual Type 0.50 2, m’;
+0.15 - g“: m
0 High lstl : lYfsl=22rns(Typ.) f).M-0.10 b',: itl 3 0.1
ts ' ' . 5
(V135: - 10V, VGS=0, f= 1kHz, OMS-ON)
IDSS= -3rnA) 12730.20 3 'l. [ 2.54
0 Good Pair Characteristics : lvGs1-vGs2l--20mv (Max.) _fl ii g
(Vns-- -10V, In-- - lmA) sfcdLnlLr1.
1 2 3 4 5 6 7
q Very Low Noise : NF=0.5dB (Typ.)
(V133: -10V, ID-- -lrnA, 1. DRAIN 1 5. SOURCE 2
RG--1kn, f=1kHz) 2. GATE 1 6. GATE 2
3. SOURCE 1 7. DRAIN 2
0 Very High Input Impedance : IGss=1.0nA (Max.) 4. SUBSTRATE
- - (Use the substrate
(VGS=30V, VDS_0) lead with open)
0 Complementary to 2SK389 JEDEC -
EIAJ -
TOSHIBA 2-10M1A
MAXIMUM RATINGS (Ta =25°C) Weight .. 0.37g(Typ.)
CHARACTERISTIC SYMBOL RATING UNIT
Gate-Drain Voltage VGDS 30 V
Gate Current 1G -10 mA
Drain Power Dissipation PD 200 mW
Junction Temperature Tj 125 °C
Storage Temperature Range Tstg -55--125 °C
961001EAA2
O TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can
malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing
TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss
of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the
TOSHIBA Semiconductor Reliability Handbook.
0 The information contained herein is presented only as a guide for the aptplications of our products. No responsibility is assumed by TOSHIBA
CORPORATION for any infringements of intellectual property or other rights 0 the third parties which may result from its use. No license is granted
b implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others.
0 T e information contained herein is subject to change without notice.
1997-04-10 1/5
TOSHIBA 25J109
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Cut-off Current IGSS VGs=30V, VDS=0 - - 1.0 nA
Gate-Drain Breakdown
Voltage V (BR) GDS VDS--0, IG-- 100PA 30 - - V
Drain Current IDSS * VDS = - 10V, VGS = 0 - 2.6 - - 20 mA
Gate-Source Cut-off Voltage VGS (OFF) VDS= - 10V, ID = -0.1PA 0.2 - 2.0 V
Forward Transfer VDS = - 10V, VGS = o,
Admittance IYfSI f = lkHz, IDSS = - 3mA 8 22 - mS
Drain Current Ratio IDSS / IDSS V133: - 10V, VGS=0 0.9 - - -
(small) (large)
Forward Transfer lyfsl / lyssl VDS= - 10V, VGs=O, 0 9
Admittance Ratio (small) (large) f = lkHz . - - -
Differential Gate-Source
Voltage IVGSI -VGS2l VDS - - 10V, ID - - lmA - - 20 mV
. . V133: -10V, VGS=0,
Input Capacitance Ciss f= 1MHz - 95 - pF
Reverse Transfer
Capacitance Crss VGD - 10V, ID - 0, f= IMHz - 25 - pl?
NF(1) VDS: -10V, ID: -lrnA, - 1.5 11
. . RG--lkn, f=10Hz
Noise Figure dB
VDS = - 10V, ID = - lmA,
NF (2) RG--1kn, f=1kHz - 0.5 2
* IDSS Classification
:GR= -2.6--6.5mA, BL-- -6---12rnA, V-- -10--20mA
1997-04-10 2/5
TOSHIBA 251109
STATIC CHARACTERISTICS ID - VDS (LOW VOLTAGE REGION)
li COMMON SOURCE COMMON SOURCE
v Ta=25°C A Ta=25''C
_ Vgs=0 g, vGs--ov
0.6 0.4 0.2 0 -10 -20 -30 -40 0 -2 -4 -6 -8 -10 -12
GATE-SOURCE DRAIN-SOURCE VOLTAGE DRAIN-SOURCE VOLTAGE VDs (V)
VOLTAGE VGs (V) VDS (V)
Istl - IDss VGS(0FF) - IDss
COMMON SOURCE
IDSS t VDs= - 10V
VGS = O
VGs (OFF): VDs = - 10V
ID = - 0.1PA
COMMON SOURCE
IDSS : Vias-- - 10V
VGS = 0
lstl 2 VDs= -10V
VGS = 0
f = lkHz
Ta = 25°C
1 Ta = 25°C
Istl (ms)
Vcs (OFF) (V)
FORWARD TRANSFER ADMITTANCE
GATE‘SOURCE CUT-OFF VOLTAGE
-1 -3 -10 -30 -1 -3 -10 -30
DRAIN CURRENT IDSS mm DRAIN CURRENT IDss (mA)
Ciss - VDS Crss - VGD
COMMON SOURCE
ID = 0
f: 1 MHz
Ta = 25°C
COMMON SOURCE
INPUT CAPACITANCE Ciss (pF')
REVERSE TRANSFER CAPACITANCE
VGS = O
f-- 1 MHz
Ta = 25°C
-0.5 -1 -3 -10 -30 0.5 1 3 10 30
DRAIN-SOURCE VOLTAGE VDS (V) GATE-DRAIN VOLTAGE VGD (V)
1997-04-10 3/5
TOSHIBA 251109
lstl - ID ID - VGS
a COMMON SOURCE
ji VDS= -10V A
ti Ta=25 c E
iii?.'. ‘2
EL?» ttt
ttd COMMON SOURCE <
t VDs= - 10v E
E f=1kHz
L“ Ta=25°C
00 -4 _s _12 -10 -20 -24 -28 0.6 0.5 0.4 0.3 0.2 0.1 0
DRAIN CURRENT ID (mA) GATE-SOURCE VOLTAGE VGS (V)
IGSX - VDs En - ID
S 301%? SOURCE 'ii COMMON SOURCE
it a - 5 vDs= _10v
S? g 1.3 \ f=1kHz
E 1 bo, Ti" N, Ta = 25''C
ie a 'si.; 1.1 ‘\‘~__.
U 1 F NI
w 5: 0.9
-4 -8 _12 -16 -20 -24 -28 -0.1 -0.3 -1 -3 -10
DRAIN-SOURCE VOLTAGE VDs (V) DRAIN CURRENT ID (mA)
NF - f NF - ID
VDS= _10v Vns-- -10V
I'l ID-- -IrnA ,3 $2151:
a Ta=25°C h a=
10 100 1k 10k 100k 0 -4 -8 -12 -16 -20
FREQUENCY f (Hz) DRAIN CURRENT ID (mA)
1997-04-10 4/5
TOSHIBA
NOISE FIGURE NF (dB)
NF - VDS
COMMON SOURCE
ID = - lmA
Ra: 11:0.
Ta=25°C
_4 -il _12 -16 -20 -24 -28 -32
DRAIN-SOURCE VOLTAGE VDS (V)
NOISE FIGURE NF ((15)
25J109
COMMON SOURCE
V133: - 10V
ID = - lmA
Ta=25''C
100 1k 10k 100k 1M
SIGNAL SOURCE RESISTANCE RG (0)
1997-04-10 5/5
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