2SJ108 ,Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications
2SJ108 ,Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications
2SJ109 ,P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS)
2SJ109 ,P CAHNNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER/ DIFFERENTIAL AMPLIFIER APPLICATIONS)
2SJ113 , SILICON P-CHANNEL MOS FET
2SJ113 , SILICON P-CHANNEL MOS FET
32F8030-CN , Programmable Electronic Filter
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
2SJ108
Field Effect Transistor Silicon P Channel Junction Type Low Noise Audio Amplifier Applications
2SJ108 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type
2SJ108 Low Noise Audio Amplifier Applications Recommended for first stages of EQ amplifiers and MC head
amplifiers. High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA) Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = −10 V, ID = −1 mA, f = 1 kHz) High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) Complementary to 2SK370 Small package
Maximum Ratings (Ta ��� � 25°C) Tstg
Electrical Characteristics (Ta ��� � 25°C)
NF (1) VDS � �10 V, ID � �1 mA, RG � 1 k�,
f � 1 kHz
Note: IDSS classification GR: �2.6~�6.5 mA, BL: �6.0~�12 mA, V: �10~�20 mA
Unit: mm
Weight: 0.13 g (typ.)
