2SD999-T1 ,Silicon transistorOPUEHCI
DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
I POWER MINI MOLD
DESCRIPTION
The 2S ..
2SD999-T2 ,Silicon transistorELECTRICAL CHARACTERISTICS (Ta=25 oC)
2SH14 , Silicon N-Channel IGBT
2SH20 , Silicon N-Channel IGBT
2SJ0536 ,Small-signal deviceElectrical Characteristics (Ta = 25°C)Parameter Symbol Conditions min typ max UnitDrain current I V ..
2SJ0536 ,Small-signal deviceapplications intended.(4) The products and product specifications described in this material are su ..
32F8030-CN , Programmable Electronic Filter
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3300A , Monolithic Common Drain N-Channel 2.5V Specified PowerTrench
3302F , 200 V - 1,000 V Three Phase Bridge 9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
3313J-1-103E , 3313 - 3 mm Trimpot® Trimming Potentiometer
2SD999-T1-2SD999-T2
