2SD841 ,Silicon NPN Power Transistors TO-220 packageTOSHIBA 4H)ISCRCTE/()p'l'()1 Si, "uvri'iesuo nnmaua 3 r9097250 TOSHIBA (DISCRETE/OPTO) 7533..”SILIC ..
2SD841. ,Silicon NPN Power Transistors TO-220 packageFEATURES:. High Voltage t VCBO=800V. Low VCE(sat) ' vcE(sat)=1.ov(yux.)(rc-=0.5h,1B=0.05h). High Sp ..
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2SD841-2SD841.
Silicon NPN Power Transistors TO-220 package
TOSHIBA tIyISCRE:TE/()pT()1
Si, DE|]00=17250 0007000 3 -fr
9097250 TOSHIBA (DISCRETE/OPTO)
SILICON NPN TRIPLE DIFFUSED MESA TYPE
HIGH VOLTAGE SWITCHING APPLICATIONS.
5tA. 01808 07.33..”
. 2SO841
lrnit in mm
tl n a
FEATURES: 1 3 MX f tiet12
. High Voltage t VCBO=8OOV gr "
. Low vcmsat) I vcE(stvt)=1aov(rux.)(rc-=o.5h,1B=0.05h) J 5; E
. High Speed Switching t tf=1.0/LS (Max.) ,
. Glass Passivated Collector-Base Junction. ii ' I
MAXIMUM RATINGS (Ta--250C) gf I a
1.5qu. 9,
CHARACTERIST 1C SYMBOL RATING UNIT ary ts I 5.4
Conector-Btrse Voltage VCBO 800 V T
Collector-Emi/er Voltage VCEQ 400 V 2-54 2.51 g
. N u: d
Emitter-Base Voltage VEBO 5 Y 3 c, 4 'l
Collector Current Tc 3 A ' -'---1
Base Current IB 1.5 A ot
1. BASE
Collector Power Ta=25°C Pc 1.5 w 2. COLLECTOR(HEAT SINK)
. . . a EMITTER
Dissipation Tc=25°C 40
o JEDEC To~220AB
Junction Temperature . To' 150 C EIAJ BO-ie
Storage Temperature Range Tstg -55-150 ot) TOSHIBA ""f'IA
Weight , 1.9g
ELECTRICAL CHARACTERISTICS (Tn.=25°C) Mounting kit No, 1075
CHARACTERISTIC SYMBOL TEST CONDITION MIN. 'l'YP. MAX. UNIT
Collector Cut-off Current TCBO VCB=800V, IE=0 - - 1 ttth
Emitter Cut-off Current IEBo TEB=51r, Ic=0 - - 1 mA
Collector-Emitter
Breakdown Voltage WBMCEO Tc=10aut, IB=0 400 - - ll
hFE 1 IrcE---5V I =10mA 8 - -
DO Current Gain ( ' C
hFE(2 VCE-lv, Ic=0. " 10 - -
Collector-Emitter
Saturation Voltage VCE(sat) IC"O'5A’ IB=0.05A - - 1.0 ll
Base-Emiuer
Saturation Voltage . 1fBE(strir) IC=O'SA’ IB=0.05A - - 1.5 V
Collector Output Capacitance Cob VCB=10V, IE:0, f=1MHz - 75 - pr'
Transition Frequency " VCE=10V, IE=-0.1A ' - 4 - MHz
20 a vcc-2=200v
isi''''ii', ICI 4000
Fall Time te B2 1B1 - - 1.0 ps
INPUT uTsi.; OUTPUT
I 10.1.
DUTY (oycLIyaCaro .
IC=O~5A TBr---uBa=t10tsA
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TOSHIBA 1:l)TSCRCTE/()P'l'01 Sl, DE[]HUH?ESD 0007009 5 T
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9097250 T63HIBA (D
1scriiifE/dirroy btoC 07809 D"r-23-tt
hFE _ Ic
10 - VCE
COMMON EMITTER
12 COMMON EMITTER m oo .
v Te r='dts'C ' 1 Tc=zsc
J? = 50
H Q: so t,
p, o 't,
0“" H L? ob
= E 10
'b', 3 5
0 o ' 1
o 'd l 6 8 IO 12 a006t101 0.03 al. 0:5 05 1 IS 5 10
W2LLiM3T0R-EMrPI'BR VOLTAGE VCE (v) COLLECTOR CURRENT Ic (A)
VCE(sat) - IB VBE - IE
COMMON EMITTER
Tc=25t
COMMON EMITTER
Tc=25t
COLLECTOR—EMITTER S&TURATION
VCECsat)
BASE—EMITTER VOLTAGE VBE (v)
> O 08
o al 02 03 04 as 05 o tll 02 G 04 05 (16
BASE CUR,RENT 13 (A) BASE CURRENT IB (A)
SWITCHING CHARACTERISTICS SWITCHING CHARACTERISTICS
,' A 1.2 12 A
i common EMITTER lt COMMON EMITTER t
A 1.0 t Irse-rBa=t10sh C,, A 1.0 10:0.5A 10 V
3. Btg Tc=25'C 't g TBa=-a05A b''
Il n u " 0.8 Tc=25'c J
a f), 0'6 6 g
g a g a
Ft 0. , e (li l N
r-", ai .4 3
'd 0.2 8 C) 'd 02 g
03 04 ati (16 0'7 t18 ag $020.04 006 0.08 010 aw 0.14016
COLLECTOR CURRENT Io (A) BASE CURRENT IBI (A)
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TOSHIBA tIyirSCRETC/0pT0+
SWITCHING CHARACTERISTICS
COMMON EMITTER
IC=Q5A
I51=005A
Tc=25©
1.o 1.0
FALL TIME tf (#45)
0.2 tr 8
STORAGE TIME tats (#8)
~002 -0.04-0.06 ~aoa -o.10 -012 -au -a16
BASE CURRENT I32 (A)
SAFE OPERATING AREA
Ic MAX (PULSED)
CONTINUOUS
kt. SINGLE NONREPETITI
PULSE Tc=2 5'c tp
COLLECTOR CURRENT Ic (A)
CURVES MUST BE DERA
LINEARLY WITH INCREAS
003 m TEMPERATURE.
2 5 10 300
30 50 100
t30LLECTt9R-EMrT'lugR VOLTAGE Irtng (v)
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9097250 TOSHIBA (DISCRETEIOPTO) "'i''"irar-TrT"0"r""'r'-srfriFi/
COLLECTOR POWER DISSIPATION PC(W)
Si, DEDHUHFJSU odifiisid l fl
PC - Ta
INFINITE HEAT SI
20 GO 6O 80 100 120 140 160
AMBIENT TEMPERATURE Ta Cc)
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