2SD799 ,Silicon NPN Power Transistors TO-220 packageFEATURES:. High DC Current Gain. Monolithic Construction with Built-ln Base-,Emitter Shunt Resistor ..
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2SD799
Silicon NPN Power Transistors TO-220 package
TOSHIBA 4HyISCRETlC/0pT01 Sl, or:lruvrisiesio nnuwaa s T
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9097550 TOSHIBA tD IS_§_R_ETE IOPTO)
_ . _ SILICON NPN TRIPLE DIFFUSED TYPE
28.799 . (DARLINGTON POWER)
INDUSTRIAL APPLICATIONS
IGNITER APPLICATIONS. Unit in mm
HIGH VOLTAGE SWITCHING APPLICATIONS. '
FEATURES: .
. High DC Current Gain , hFE=600(Min.)(VCE=2V,IC=2A)
. Monolithic Construction with Built-Tn Base- .
Emitter Shunt Resistor.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC SYMBOL RATING UNIT ,
Collector-Base Voltage VCBO 600 V
Collector-Emitter Voltage VCEO 400 V E
Emitter-Base Voltage VEBO 5 V 2-54- 2-54 _ Si
Collector Current Ic 6, A g: g F
Base Current TB 1 A " I 1:13-91
Collector Power Dissipation P 30 TI e.)
(Tc=25°c) C N
Junction Temperature Td 150 °C l, BABE
Storage Temperature Range Tstg -55m150 °C a COLLECTOR (HEAT SINK)
- a EMITTER
EQUIVALENT CIRCUIT
r JEDEO TO - zzOAB
BAtHilo--1."
l EIAJ so - 16
L...__"____"_“'_ TOSHIBA 2 - lOAlA
EMITTRR Mounting Kit No. AC75
ELECTRICAL CHARACTERISTICS (Ta=25°C) Height l 1-98
CHARACTERISTIC SYMBOL TEST CONDITION MIN.TYP. MAX. UNIT 3
Collector Cut-off Current: ICBO VCB=600V, IE=0 - - 0.5 mA
Emitter Cut-off Current IEBO ' VEB=5V, IC=0 - - 3 mA
Collector-Em'-: Breakdown - .-
ll =10nA I =0 400 - -
Voltage (BR)CEO Ic , B V
DC Current Gain hFE(l) VCE=2V, IC=2A 600 - -
hFE(2) VCE=2V, Ic=4A 100 - -
Collector-Emi; = = - ... 2 O
Saturaton Voltage VCE(sat) lc hh, IB 0.0hit . V
Base-Emitter = = - -
Saturation Voltage VBE(Sat) Tc 4A, 13 0.04A 2.5 V
Emitter-Collector = = - - .
Forward Voltage VECF IE at, 13 0 3 O ll
Collector Output Capacitance Cob VCB=SOV,IE=0,f=1MHz - 35 - pF
Turn-on Time f 20ttts I OUTPUT - 1 -
Switching on I INPUT_B.J1 """ C
Time Storage Time tstg BI Ima "fggl 8 - 8 - us
F 11 n t IBr=-1Ba'=0.MA --.--- - 5 -
a me f DUTY CYCLE§1% Vcc=100V
TOSHIBA CORPORA'HDN lllll||IlllllllllllllllllllllllllllllllllllllllllllllllllHlllllllllllllllllllllllllllllll||llllllllllllIHII||lllllIIHHIIHIIIIlllllllIIIHHIIHXIIIIIIIIIIllllllllllllllllllllllllllllllll||||Hlll|llll|l|IHIIIIIIHI
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9097250 TOSHIBA (DISCRETE/OPTO) 56C 077 4 o' T-33-29
STATIC CHARACTERISTICS hFE - IC
5° so COMMON EMIT TER
VCE=2V
IC (‘0
COLLECTOR
CURRENT
(,3 ?-
B = 0.5m
DC CURRENT GAIN hFE
ts l 2 2 t 6
COLLECTOR-
BASE CURRENT 04EMITTER VOLTAGE
In (M) Iron (V)
0.05 0.1 tha 0.5 1 s 10
COLLECTOR CURRENT Io (A)
E‘EM ITTER
LTAGE v33
E " VCE(sat) - 10
1.6 I g 1
9. COMMON EMITTER
g,‘ ty 10/ 13 = 100
F-s v 1
lo - VBE ii tl
Q COMMON EMITTER gg M
u VCE - 2 V a a
o o tr O.
H 0.3 1
COLLECTOR CURRENT 10 (A)
g VBE sat - To
8 1o ( )
3 gCi?, 5 COMMON EMITTER
8 'il 10 / I3 = 100 l
'a A G
.3 ai 9
O t; e,
tD 2 1
0.4 0.8 1.2 1.6 2.0 2.4 2.8 t: 0.5
BASE-EMITTER VOLTAGE VBE (v) iig
c: 0.3
0.02 0.05 0.1 0.3 0.5 1 3 5 10
COLLECTOR CURRENT In (A)
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TOSHIBA II)ISCRliyI'E/()P'l'()1 Si, otuvriisin nnnwas n Ir"
9097250 TOSHIBA tD1SCRETE/OPTtD) 56C '5Tt95 o _ l
28D799 ,
2 Po - Ta SAFE OPERATING AREA
o " 80
E C) Tc----Ta "' SINGLE NONREPETITIVE PULSE Tc:
'l', G (INFINITE HEAT SINK) Fo MAX.(P‘ULSED)* j
g; 30 . © aooxsooxmmu IO I MAX
3 \ (HEAT SINK) A ty C .
m f; G) lOOXLOOXZInmAe C, Jef,; ,
m v 2tr- Ns (HEAT SINK) 3 IN oua 'ii,
t o © "ss/i) 70X'70X2mmM o 'y
th, ihe \(HEAT SINK) H. _ 00
g i3 1 e;
g IO trs' g "o??:
a P) - "ss ‘,\\\ g 0.5 'k',','),
8 """"-'-c-s-ct2ii:'tiiits co C" v.
00 Atl 80 120 160: 200 ')
AMBIENT TEMPERATURE Ta Cc) o 0.1
o 0-05 CURVES MUST BE
DERATED LINEARLY
WITH INCREASE
IN TEMPERATURE
2 5 10 GO 50 100 300500 1000
GoLLBCTOrt-BMITTErt VOLTAGE VCE (V)
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