2SD798 ,POWER TRANSISTORS(6A,300V,30W)2SD798ZSD798I G N IT E R APPLI CATI 0 NS INDUSTRIAL
2SD798 ,POWER TRANSISTORS(6A,300V,30W)APPLICATIONS Unit 1n mm10.3MAX. 953.6 i 0.2_-------)-'--------TThrh DC Current Gain . hmm=1500 (Min ..
2SD799 ,Silicon NPN Power Transistors TO-220 packageFEATURES:. High DC Current Gain. Monolithic Construction with Built-ln Base-,Emitter Shunt Resistor ..
2SD799 ,Silicon NPN Power Transistors TO-220 packageELECTRICAL CHARACTERISTICS (Ta=25°C)CHARACTERISTICCollector-Base Voltage Vco11ectorr.Erutter Voltag ..
2SD812 ,Si NPN triple diffused planar. High power amplifier.Electrical Characteristics (Ta = 25 "C)l Unit 3 mm l39.0 i0.511.0i0.5 10.7max.26.5 max.30.2 i0251 1 ..
2SD813 ,SI NPN EPITAXIAL PLANARPANASONIC IN0L/'ELE:KfSEhI1 '?iilC I) IEEIBEBSLI DDU‘IHDB El r0 T#539192SD8132SD8'I aiv I) a V NPN ..
3269W-1-502 , 3269 - 1/4 ” Square SMD Trimpot® Trimming Potentiometer
3296W-103 , MINIATURE MULTITURN CERMET TRIMMERS
3296W-103 , MINIATURE MULTITURN CERMET TRIMMERS
3296W-104 , MINIATURE MULTITURN CERMET TRIMMERS
3296W-104 , MINIATURE MULTITURN CERMET TRIMMERS
3296W-1-102 , 3296 - 3/8 ” Square Trimpot® Trimming Potentiometer
2SD798
POWER TRANSISTORS(6A,300V,30W)
TOSHIBA 2SD798
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SID798
IGNITER APPLICATIONS INDUSTRIAL APPLICATIONS
HIGH VOLTAGE SWITCHING APPLICATIONS Unit m mm
10.3MAX. 953.6:02
0 High DC Current Gain : hFE=1500 (Min.) (VCE=2V, 1C=2A) 5%?491: 'ii, Q f
1.5MAX. I ,3
0.75 ' I '"
2.54 2.54 i'?
[ii, h .. 1 qt
L - +4
l. BASE
2. COLLECTOR (HEAT SINK)
MAXIMUM RATINGS (Ta =25°C) 3. EMITTER
CHARACTERISTIC SYMBOL RATING UNIT JEDEC T0-220AB
Collector-Base Voltage VCBO 600 V EIAJ SC-46
Collector-Emitter Voltage VCEO 300 V TOSHIBA 2-10A1A
Emitter-Base Voltage VEBO 5 V Weight : 1.9g
Collector Current 10 6 A Mounting Kit No. AC75
Base Current 1B 1 A
Collector Power Dissipation
(Tc=25°C) PC 30 W
Junction Temperature Tj 150 °C
Storage Temperature Range Tstg -55--150 "C
EQUIVALENT CIRCUIT
COLLECTOR
BASE c
L e-----------.-------.----
EMITTER
1 2001-05-24
TOSHIBA 2SD798
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 600V, IE = 0 - - 0.5 mA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 0.5 mA
Collector-Emir Sustaining V I - 0 5A L= 40mH 300 V
Voltage CEO (SUS) C - . , - - -
. hFE (1) VCE = 2V, IC = 2A 1500 - -
DC Current Gain hFE (2) VCE = 2V, IC = 4A 200 - -
Collector-Emi; Saturation
Vol tage VCE (sat) 1C - 4A, IB - 0.04A - - 2.0 V
Base-Emitter Saturation
Voltage VBE (sat) IC - 4A, IB - 0.04A - - 2.5 V
Collector Output Capacitance Cob VCB = 50V, IE = o, f T-T 1MHz - 35 - pF
. OUTPUT
Turn-on Time ton IN- I ________ - 1 -
ZOIusPUT: 13.1: .
Switching . 1132:
Time Storage Time tstg IB1“ I i. -------.-" - 8 - ps
. I131: -IB2=0.04A, V
F 11 T CC - -
a me tf DUTY CYCLES 1% "-:100V 5
TOSHIBA
10 (A)
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION
COLLECTOR CURRENT 10 (A) VOLTAGE VCE (sat) (v)
COLLECTOR EOWER DISSIPATION
IC - VCE
',,VC,
CV'" COMMON EMITTER
e.,.-----''" Te = 25°C
w.--'"''
\\\\\\
4 8 12 16
COLLECTOR-EMITTER VOLTAGE VCE (V)
VCE (sat) - IC
COMMON EMITTER
IC/IB=100
0.1 0.3 1 3 10
COLLECTOR CURRENT 10 (A)
IC - VBE
Tc=100°C 25 /-ss
/ / / COMMON EMITTER
// v/ VCE--2V
0 0.8 1.6 2.4 3.2 4.0
BASE-EMITTER VOLTAGE VBE (V)
PC - Ta
co Tc=Ta
C) INFINITE HEAT
30 SINK
's, Cf)) 300x300x2nun At
'ss HEAT SINK
\ CL" 100x100X2mm At
20 (2) 'N HEAT SINK
' \ Cd) 70X70X2mm Ad
O? "s,. 'ss. HEAT SINK
10 _ "ss \
(AD ""ss2 ssh,
o "---------lgs
0 40 80 120 160 200 240
AMBIENT TEMPERATURE Ta (°C)
2SD798
hFE - IC
Tc=100°C
m 5000
S 3000
a 1000
at -55
© COMMON EMITTER
VCE=2V
0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT IC (A)
VBE (sat) - 10
COMMON EMITTER
IC/IB = 100
Te = - 55°C
VOLTAGE VBE (sat) (V)
BASE-EMITTER SATURATION
0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
IC MAX. (PULSED) It.
IC MAX.
5 (CON- 500/m).k.
2 3 TINUOUS)
S? lmsX
F 1 100msy.'(.
i? DC OPERATION
m 0.3 (Tc--25''C)
ti 0.1
X SINGLE NONREPETITIVE
PULSE Tc=25°C
0.03 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO MAX.
2 10 30 100 30 1000
C0LLECT0RaMITTER VOLTAGE VCE (V)
TOSHIBA 2SD798
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-05-24
www.ic-phoenix.com
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