2SD687.. ,Silicon NPN Power Transistors TO-220C packageTOSHIBA 1DTSCREyl'E/0PT01 Sl, DEI‘HH7250 UUU??E3 7 ll' '”:49097250 TOSHjBA t-i5iSCRETE/OPTO) 50C, 0 ..
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2SD687-2SD687..
Silicon NPN Power Transistors TO-220C package
TOSHIBA {DISCRETE/OPTO} Si:, DED‘IU‘ITESU 0007753 7 fl'
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9097250 TOSH_I_BA CDISCRETE/OPTO) 55L 07703 D T-33-29
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
. 28.687 . (DARLfNGTONPOWER)
SWITCHING APPLICATIONS. ' '
_ INDUSTRIAL APPLICATIONS
HAMMER DRIVE , PULSE MOTOR DRIVE APPLICATIONS. Unit in mm
POWER AMPLIFIER APPLICATIONS. JG15MAX, 36i02
FEATURES t 5 f 2js'L E
. High DC Current Cain J ts E
t hFE=2000(Min.)(VCE=2V, Ic=1A) 2.
. Low Saturation Voltage l
t vcE(sat)='1.5v04ax.)(rc=s2A) j 3
MAXIMUM RATINGS (Ta=25°C) S,
CHARACTERISTIC SYMBOL RATING UNIT H
Collector-Base Voltage VCBO 60 V ti
Collector-Emi-sr Voltage VCEO " V n 2 'u" t
Emitter-Base Voltage VEBO ll g l "13 ca
: Continuous Collector Current IC A ‘m - ---4 k)
. Collector Power Dissipation oi
!' (Tc=25°C) PC 25 w
E Junction Temperature Td 150 °C 1. BABE
. - o 2. COLLECTOR (HEAT SINK)
E Storage Temperature Range Tstg 55m150 C lk EMITTER
, EQUIVALENT CIRCUIT conwc'ron JKDEO TO - 220AB
. BASE F/c, EIAJ so - "
i - I TOSHIBA 2 _ 10 A IA
i l I Mounting Kit No AC75
i 2ttt . l .
i L__4_8}:? ______ ___J Weight I 1.9g
3 EMITTER
f ELECTRICAL CHARACTERISTICS (Ta=25°C)
.) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current TCBO VCB=60V, IE=0 - - 20 "
Emitter Cut-off Current IEBO VEB=5V, Ic=0 - - 2.5 mA
Collector-Emi- v I =25mA I =0 40 - - V
Breakdown Voltage (BR)CEO C , B
hFE(1) VCE=2V, IC=1A 2000 - -
DC Current Gain -
hFE(2) VCE=2V, Ic=3A 1000 - -
Saturation Collector-Ever VCE(sat) IC=2A, IB=4mA - - 1.5 V
Voltage Base-Emitter vBE
IC=2A, IB=4mA - - 2.0
Turn-on Time t 20 5 TPOT - 0.1 -
on I "‘u INPUT- Cl .
B ' - -
Switching Time Storage Time tstg W132 g 1.0 us
Fall Time tr TB1---EBa'=6mA - 0.2 -
DUTY cYchgqu, Voc=3°V
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This Material Copyrighted By Its Respective Manufacturer
TOSHIBA 4H)ISCRCTE/0pT01
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9097256 TOSHIBA -d:yfisdiiirTEF6PTo)
COLLECTOR-EM ITTER SATURATION
COLLECTOR CURRENT 16 (A)
COLLECTOR CURRENT
VcE(aa.t) 0’)
V0 LTAGE
SI: mrflcuvrizsso nnn'mzu n T
Ic - VCE
COMMON EMITTER
Te = 25'0
IE = 1'75 /tA
1 a G l 5
tM)LIuix3'NR-EMITTER VOLTAGE VGE (V)
I0 - VCE
COMMON EMITTER
Te ----tst5t;
COLLEtV1lOR-EMI'rNR VOLTAGE vcE (V)
VCE(sat) - Io
common EMITTER
16/13 = 500
0.8 0.5 l G 5
COLLECTOR CURRENT Io (A)
Ic (M‘
COLLECTOR CURRENT
DC CURRENT GAIN
It: (A)
COLLECTOR CURRENT
- T-r-ir-ir-ri-rr-rr-d,
D T-33-29
10 - VCE
COMMON EMITTER
To = 100 T
IB---' 100m
C0LLSDT0R-EMITTER VOLTAGE VCE (V)
hFE - Ito
COMMON EMITTER
VCE = 2 v
0.5 0.5 1 G 5 10
COLLECTOR CURRENT Ic (A)
10 - VBE
COMMON
EM ITTER
vCE=2v
0.8 L6 2.4 32
BASE-EMITTER VOLTAGE VBE (v)
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This Material Copyrighted By Its Respective Manufacturer
TOSHIBA IIyISCRETE/0pT0:r Si, DEU=10=17250 0007705 0 T
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9097250 TOSHIBA (DISCRETE/OPTO) - 50C 07-765 D T-33-29
VBE(eat) - Ic PC - Ta
ts common ITTINt
zv I /1 =?00 V . C2rc--T'ts
E? ti o B p? 28 INFINITE HEAT SINK
it g z -.a) © sooxsooxznmu
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ge : (B1oox1ooy:ammAg
ti g 20 HEAT SINK
a m _ _ © 50X50X2mmA£
F (0 © ‘V
H 3 16 s. HEAT SINK
£53 1 m _ la NO HEAT SINK
titl M I 's,
20 t 12 © s
m> _ 94 L ss.
0.1 0.3 0.5. 1 . -3 ti g tseal) _
COLLECTOR CURRENT 1c (A) t; g "s, 's, ,
a l L 's "ss N.
'a "s s,
SAFE OPERATING AREA 8 J? "s, ss?S
10 c _"
: Io MAX.(PULSED)~* 0 25 50 'rs 100 125 150 175
AMBIENT TEMPERATURE T .
5 fl 0 J ux a Cc)
- 10 MAX. V \
A (CONTINUOUS) " rg,
S a " '
J? (é) '','s'kr'
H 1 Ci',,,
2 1 trflri-
a T 6 \_L
i,' 0.5 - Nh,),
n: as SINGLE NN,
o GN- NONREPETITIVE N
g PULSE Tc=25‘c
o CURVES MUST BE DERATED
0.1:LINEARLY WITH INCREASE
:IN TEMPERATURE.
0.05 -. , I l t Ad 111
1 s 5 10 so 50 100
G'0LLECTOR-EM1TTER VOLTAGE VCE (v)
TOSHIBA CORPORATION Illlllllll|lllllllllll||Illl|Illlll|Illl(llllll|lllllIllulllllllIIIHIllllllllllllllllullllllllIlllllIIIllIlllllIlllll|IlllflllllllllllllllullmlllIllllllllllllllilllllllIllllllllnllllulllllllllllllllllfllllINIIII
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This Material Copyrighted By Its Respective Manufacturer
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