2SD633. ,POWER TRANSISTORS(7A,40W)TOSHIBA 2SD633,2SD6352SD633, ZSD635HIGH POWER SWITCHING
2SD635 ,POWER TRANSISTORS(7A,40W)APPLICATIONS INDUSTRIAL
2SD637 ,Silicon NPN epitaxial planer typeAbsolute Maximum Ratings (Ta=25˚C)n–3 2 1Parameter Symbol Ratings UnitCollector to base voltage V ..
2SD655 , Silicon NPN Epitaxial
2SD655 , Silicon NPN Epitaxial
2SD662 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max Unit2SD0662 V I ..
3266W-1-202 , 1/4 Square Trimming Potentiometer
3269W-1-502 , 3269 - 1/4 ” Square SMD Trimpot® Trimming Potentiometer
3296W-103 , MINIATURE MULTITURN CERMET TRIMMERS
3296W-103 , MINIATURE MULTITURN CERMET TRIMMERS
3296W-104 , MINIATURE MULTITURN CERMET TRIMMERS
3296W-104 , MINIATURE MULTITURN CERMET TRIMMERS
2SD633-2SD633.-2SD635
POWER TRANSISTORS(7A,40W)
TOSHIBA
2SD633,2SD635
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SID633, 2SID635
HIGH POWER SWITCHING APPLICATIONS
HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS
0 High DC Current Gain : hFE=2000 (Min.)
0 Low Saturation Voltage : VCE (sat)=1-5V (Max.)
It Complementary to 2SB673 and 2SB675.
MAXIMUM RATINGS (Ta = 25°C)
INDUSTRIAL APPLICATIONS
Unit in mm
10.3MAX. 953.6 i 0.2
6.7MAX.
15.3NIAX‘
5.6MAX,
1. MAX,
l. BASE
2. COLLECTOR (HEAT SINK)
3. EMITTER
JEDEC TO-220AB
EIAJ SC-46
TOSHIBA 2-10A1A
CHARACTERISTIC SYMBOL RATING UNIT
2SD633 100
Collector-Base Volta e V V
g 2SD635 CBO 60
2SD633 100
Collector-Emitter Volta e V V
g 2SD635 CEO 60
Emitter-Base Voltage VEBO 5 V
Collector Current 7 A
Base Current IB 0.7 A
Collector Power Dissipation
(Tc=25°C) C 0 W
J unction Temperature Tj 150 'C
Storage Temperature Range Tstg -55-150 T
EQUIVALENT CIRCUIT
COLLECTOR
BASE i
EMITTER
Weight : 1.9g (Typ.)
Mounting kit No. AC75
TOSHIBA 2SD633,2SD635
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off 2SD633 VCB = 100V, IE = 0 - - 100
C t ICB0 PA
urren 2SD635 VCB =60V, IE =0 - - 100
Emitter Cut-off Current IEBO VEB =5V, IC =0 - - 3.0 mA
Collector-Emitter 2SD633 100 - -
Breakdown Voltage 2SD635 V (BR) CEO IC =50mA, 1B =0 60 - - V
h V =3V, I =3A 2000 - 15000
DC Current Gain FE (1) CE C
hFE (2) VCE = 3V, IC = 7A 1000 - -
Collector-Emi; Saturation VCE (sat) (1) IC = 3A, IB = 6mA - 0.9 1 5 V
Voltage VCE (sat) (2) IC = 7A, IB = 14mA - 1.2 2.0
Base-Emitter Saturation
Voltage VBE (sat) 1C - 3A, IB - 6mA - 1.5 2.5 V
T Ti t 20ps IN r___9_I_J:I‘PUT 0 8
urn-on 1me - - . -
on |“I PUT 1&1
Switching . JI/C a
Time Storage Time tstg - 3.0 - ps
1B1 = -1B2=6mA, V
Fall Time tf DUTY CYCLES 1% 1ffi, - 2.5 -
IC - VCE IC - VCE
COMMON EMITTER
Tc = 100°C
COLLECTOR CURRENT 10 (A)
0 2 4 6
8 10 12
C0LLECT0WEMITTER VOLTAGE VCE (V)
COLLECTOR CURRENT 10 (A)
COMMON EMITTER
Tc = 25°C
IB=0.2mA
6 8 10 12
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SD633,2SD635
IC - VCE hFE - IC
COMMON EMITTER COMMON EMITTER
A VCE=3V
s Tc---50''0
M 10000
2; ~ 5000
D t 3000
o 1000
0 2 4 6 8 10 0.3 1 3 10 30
C0LLECT0R-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)
VCE(sat) - IC VBE(sat) - IC
COMMON EMITTER
I /1 =500
C B Te---50''C
COMMON EMITTER
Icllg=500
BASE-EMITTER SATURATION
VOLTAGE VBE (sat)
0.4 1 3 10 30
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE vows“) (V)
100 SAFE OPERATING AREA
0.4 1 3 10 30 l l lllIlll
IC MAX. (PULSED) X
COLLECTOR CURRENT IC (A) 10 I I I I c _
I I I I , IrmW.
IC MAX. 's N \
IC - VBE 5 (CONTINUOUS) \ \ k
3 I I I 'N. "--10rnsik.
Tc=25°C "s--100 X
DC OPERATION th ms
III sl)
.)K. SINGLE NONREPETITIVE \
PULSE Tc=25°C h l
0.5 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
COLLECTOR CURRENT IC (A)
COLLECTOR CURRENT 10 (A)
Tc--100t 25 - 0.3 IN TEMPERATURE. 'tN
I I I I I Ill I F
0.1 2SD635 VCEO MAX.
COMMON EMITTER
VCE=3v 28.031019 MAX; "e-.
0.04 I I I I I III I
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 1 3 10 30 100
BASE-EMITTER VOLTAGE VBE (V) COLLECTOR-EMITTER VOLTAGE VCE (V)
3 2001-05-24
TOSHIBA 2SD633,2SD635
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-05-24
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