2SD596 ,AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
0 .Micro package.
0 High DC current gain. hFE ." 200 TYP. (Veg = 1.0 V, lc = 100 mA)
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2SD596L ,Silicon transistorELECTRICAL CHARACTERISTICS (TA=25 ''C)
T CHARACTER'ISTIC _ ' . SYMBOL _ . . , _ TEST CONDITIONS
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2SD596-T1B ,Silicon transistorFEATURES
0 .Micro package.
0 High DC current gain. hFE ." 200 TYP. (Veg = 1.0 V, lc = 100 mA)
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2SD596-T2B ,Silicon transistorapplications.
I 1ti!.r1-1iils' _
2SD600 ,NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier ApplicationsFeatures Package Dimensions · High breakdown voltage V 100/120V, HighCEO unit:mmcurrent 1A.2009B · ..
2SD600 ,NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier ApplicationsAbsolute Maximum Ratings at Ta = 25˚CPl arameter Ss ymboC0 ondition2K SB631, D602t SB631K, D600 Uni ..
322CNQ030 ,30V 300A Schottky Discrete Diode in a TO-249AA Non-Isolated packageapplications are in switching power supplies, converters,waveformfree-wheeling diodes, and reverse ..
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2SD596
