2SD592A ,SILICON TRANSISTORSAbsolute Maximum Ratings T = 25°CaParameter Symbol Rating Unit+0.15 +0.150.45 0.45–0.1 –0.1Collect ..
2SD596 ,AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLDFEATURES
0 .Micro package.
0 High DC current gain. hFE ." 200 TYP. (Veg = 1.0 V, lc = 100 mA)
. ..
2SD596L ,Silicon transistorELECTRICAL CHARACTERISTICS (TA=25 ''C)
T CHARACTER'ISTIC _ ' . SYMBOL _ . . , _ TEST CONDITIONS
..
2SD596-T1B ,Silicon transistorFEATURES
0 .Micro package.
0 High DC current gain. hFE ." 200 TYP. (Veg = 1.0 V, lc = 100 mA)
. ..
2SD596-T2B ,Silicon transistorapplications.
I 1ti!.r1-1iils' _
2SD600 ,NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier ApplicationsFeatures Package Dimensions · High breakdown voltage V 100/120V, HighCEO unit:mmcurrent 1A.2009B · ..
322CNQ030 ,30V 300A Schottky Discrete Diode in a TO-249AA Non-Isolated packageapplications are in switching power supplies, converters,waveformfree-wheeling diodes, and reverse ..
323-00 , INDUCTOR 4 mH POTS LOW PASS FILTER
32376 , TI/E1/CEPT/ISDN-PRI DUAL TRANSFORMER
3266W-1-202 , 1/4 Square Trimming Potentiometer
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2SD592A
