2SD526 ,POWER TRANSISTORS(4A,80V,30W)ELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SD545 ,FOR AUDIO FREQUENCY POWER AMP, CONVERTERS, ELECTRONIC GOVERNORS
2SD553 ,Silicon NPN Power Transistors TO-220C packageAPPLICATIONS Unit in mm10.3MAX. 953.6 i 0.2_--------'--------Low Saturation Voltage : VCE (sat)=0-4 ..
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2SD5702 , Silicon NPN Power Transistors
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323-00 , INDUCTOR 4 mH POTS LOW PASS FILTER
32376 , TI/E1/CEPT/ISDN-PRI DUAL TRANSFORMER
3266W-1-202 , 1/4 Square Trimming Potentiometer
3269W-1-502 , 3269 - 1/4 ” Square SMD Trimpot® Trimming Potentiometer
3296W-103 , MINIATURE MULTITURN CERMET TRIMMERS
2SD526
POWER TRANSISTORS(4A,80V,30W)
TOSHIBA 2SD526
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SID526
POWER AMPLIFIER APPLICATIONS Unit in mm
10.3MAX. ¢3.6i0.2
0 High Power Dissipation : PC=30W (Tc=25°C) 1d'y''1-ei1
6.7MAXV
15.3MAX.
0 Good Linearity of hFE.
o Complementary to 2SB596. _ ' l
0 Recommend for 20--25W High Fidelity Audio Frequency
Amplifier Output Stage.
13.0MIN.
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT E.
Collector-Base Voltage VCBO 80 V
Colleetor-Emitter Voltage VCEO 80 V
Emitter-Base Voltage VEBO 5 V 1. BASE
2. COLLECTOR (HEAT SINK)
Collector Current 10 A 3. EMITTER
Base Current IB 0.4 A JEDE C T O- 2 2 0 AB
Collector Power Dissipation
(Tc = 2 5°C) PC 30 W EIAJ SC-46
Junction Temperature Tj 150 "C TOSHIBA 2-10AIA
Storage Temperature Range Tstg -55--150 T Weight : 1.9g
Mounting Kit No. A075
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 80V, IE = 0 - - 30 PA
Emitter Cut-off Current IEBO VEB = 5V, 10 = 0 - - 100 PA
Collector-Emitter Breakdown
Voltage V (BR) CEO 1C - 50mA, IB - 0 80 - - V
hFE (1)
V =5V, I =0.5A 40 - 240
DC Current Gain (Note) CE C
hFE (2) VCE = 5V, IC = 3A 15 50 -
Collector-Emi) Saturation
Vol tage VCE (sat) 1C - 3A, IB - 0.3A - 0.45 1.5 V
Base-Emitter Voltage VBE VCE = 5V, 10 = 3A - 1.0 1.5 V
Transition Frequency fT VCE = 5V, IC = 0.5A 3 8 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = lMHz - 90 - pF
Note : hFE(1) Classification R : 40-80, O : 70--140, Y : 120-240
1 2001-05-24
TOSHIBA
IC - VCE
- COMMON EMITTER
2 240 200 160 Tc=25°C
:) 120
0 1 2 3 4 5 6 7
C0LLECT0R-EMITTER VOLTAGE VCE (V)
VCE(sat) - IC
5 COMMON EMITTER
3 IC / IB = 10
0.003 0.01 0.03 0.1 0.3 1
COLLECTOR CURRENT 1C (A)
SAFE OPERATING AREA
COLLECTOR—EMITTER SATURATION
VOLTAGE vcmm) (V)
20 /llll l
10 :10 MAX. (PULSED) IC. 1msyk. -
A - I I I I I I I I h L., 7
S -IC MAX. \ \ I 13315); -
5 -(C0NTINU0US) N " P"'" -
S? N l 1s).k. -
3 N wt" e'
a: _DC OPERATION "N, , l
“5 (Tc=25°C)
o 1 x t
M N N ', l
3 0.5 .)k. SINGLE NONREPETITIVE y k \
g 0 3 PULSE Tc=25°C l V
O . CURVES MUST BE DERATED l
LINEARLY WITH INCREASE l
IN TEMPERATURE. VCEO M AX.
2 10 30 100 300
c0LLEcT0RaMITTER VOLTAGE VCE (V)
DC CURRENT GAIN hm
10 (A)
COLLECTOR CURRENT
COLLECTOR POWER DISSIPATION PC
2SD526
hFE - IC
COMMON EMITTER
VCE =5V
0.003 0.01 0.03 0.1 0.3 l 3
COLLECTOR CURRENT IC (A)
1.0 IC - VBE
COMMON EMITTER // /
VCE=5V // /
3.0 ///
2.0 Tc=75°C/ 25 /.-25
1.0 ///
0 0.4 0.8 1.2 1.6
BASE-EMITTER VOLTAGE VBE (V)
35 (D Tc=Ta INFINITE HEAT SINK
(2)300X300X2mm At HEAT SINK
C) C1)200y:200y:2mm At HEAT SINK
30 (lf)100x100X2mm At HEAT SINK
(S100x100xlmm At HEAT SINK
Ci)100x100xlmrn Fe HEAT SINK
(?J50X50x2mrn At HEAT SINK
25 N ®50x50x1mm At HEAT SINK
@50x50x1mm Fe HEAT SINK
m NO HEAT SINK
20-e N
_® 'ss
15 sh,,
_<4> "C,, ,
Io-?) ttsN,t, "N
_o _C"?,5irsaCf":tc, \
5 '-s,rsd.',1sdt:1s, 1tsN
_7)<>’(9> "'"s'at-r. 'ul
0 lalpl I I I
o 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta (°C)
TOSHIBA 2SD526
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-05-24
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