2SD525 ,Silicon NPN Power Transistors TO-220C packageELECTRICAL CHARACTERISTICS (Tc = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SD526 ,POWER TRANSISTORS(4A,80V,30W)ELECTRICAL CHARACTERISTICS (Ta = 25°C)CHARACTERISTIC SYMBOL TEST CONDITION UNITCollector Cut-off Cu ..
2SD545 ,FOR AUDIO FREQUENCY POWER AMP, CONVERTERS, ELECTRONIC GOVERNORS
2SD553 ,Silicon NPN Power Transistors TO-220C packageAPPLICATIONS Unit in mm10.3MAX. 953.6 i 0.2_--------'--------Low Saturation Voltage : VCE (sat)=0-4 ..
2SD569 , isc Silicon NPN Power Transistor
2SD5702 , Silicon NPN Power Transistors
322CNQ030 ,30V 300A Schottky Discrete Diode in a TO-249AA Non-Isolated packageapplications are in switching power supplies, converters,waveformfree-wheeling diodes, and reverse ..
323-00 , INDUCTOR 4 mH POTS LOW PASS FILTER
32376 , TI/E1/CEPT/ISDN-PRI DUAL TRANSFORMER
3266W-1-202 , 1/4 Square Trimming Potentiometer
3269W-1-502 , 3269 - 1/4 ” Square SMD Trimpot® Trimming Potentiometer
3296W-103 , MINIATURE MULTITURN CERMET TRIMMERS
2SD525
Silicon NPN Power Transistors TO-220C package
TOSHIBA
2SD525
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SID525
POWER AMPLIFIER APPLICATIONS
0 High Breakdown Voltage
0 Low Collector Saturation Voltage : VCE (sat)=2.0V (Max.)
0 Complementary to 2SB595.
0 Recommend for 30W High Fidelity Audio Frequency Amplifier
Output Stage.
MAXIMUM RATINGS (Tc = 25°C)
: VCEO = 100V
Unit in mm
10.3MAX.
¢3.6i0.2
1d'y''1-ei1
6.7MAXV
15.3MAX.
13.0MIN.
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT E.
Collector-Base Voltage VCBO 100 V
Colleetor-Emitter Voltage VCEO 100 V
Emitter-Base Voltage VEBO 5 V l. BASE
2. COLLECTOR HEAT SINK
Collector Current 10 5 A 3. EMITTER ( )
Base Current IB 0.5 A JEDE C T O- 2 2 0 AB
Collector Power Dissipation
(Tc = 2 5°C) PC 40 W EIAJ SC-46
Junction Temperature Tj 150 "C TOSHIBA 2-10AIA
Storage Temperature Range Tstg -55--150 'C Weight : 1.9g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 100V, IE = 0 - - 100 PA
Emitter Cut-off Current IEBO VEB = 5V, IC = 0 - - 1 mA
Collector-Emitter Breakdown
Voltage V (BR) CEO IC =50mA, IB - 0 100 - - V
hFE (1)
V = 5V, I = IA 40 - 240
DC Current Gain (Note) CE C
hFE (2) VCE=5V, Ic=4A 20 - -
Collector-Emitter Saturation - -
Vol tage VCE (sat) 1C - 4A, IB - 0.4A - - 2.0 V
Base-Emitter Voltage VBE VCE = 5V, IC = IA - - 1.5 V
Transition Frequency fT VCE = 5V, IC = IA - 12 - MHz
Collector Output Capacitance Cob VCB = 10V, IE = 0, f = lMHz - 100 - pF
Note :
hFE (1) Classification
R : 40-80, O : 70--140, Y : 120-240
TOSHIBA 2SD525
IC - VCE hFE - IC
COMMON EMITTER
1"ii 500 VCE=5V
S? J? 300
'it g 100
o M 50
:9 D 30
0 COMMON EMITTER 10
Tc=25°C
0 1 2 3 4 5 6 0.01 0.03 0.1 0.3 1 3
C0LLECT0R-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT 10 (A)
g 3 VCE(sat) - 10 IC _ VBE
Ci, COMMON EMITTER COMMON EMITTER
g3 IC/IB=10 VCE=5V
- a 0.1 A
g J, s
g a 0.5 J?
E> 0.3 F
gt; 0.1 “S
3 0.05 o
8 0.03 8
0.01 0.03 0.1 0.3 1 3 10 d
COLLECTOR CURRENT IC (A) 8
SAFE OPERATIN G AREA
I I I I III I 0 0.4 0.8 1.2 1.6 2.0
10 10 MAX. (PULSED) Y.'1 BASE-EMITTER VOLTAGE VBE (V)
I I I I I I I l h '
I I I I I I I I h E , M.'.
2 lllllll /lll"rs"' P T
V -1 l l C - C
C MAX. (CONTINUOUS) , \ t
S? 5 '; \ \ \ ,10ms>:< - a
E \ v, ,100ms>:< - 2
Z 3 N ,1s>:< - ti
2: >6 "
ttt _DC OPERATION \, , t a
ie (Tc=25°C) l \ " E
Di N, mg
t,' 1 N' \ l t Q
E X SINGLE NONREPETITIVE h N t 9.1:.
g PULSE Tc=25°C \ g
O 0.5 CURVES MUST BE N 'N t
DERATED LINEARLY WITH l y
INCREASE IN 3
TEMPERATURE. VCEO MAX. 0
3 10 30 100 0 25 50 75 100 125 150
c0LLEcT0RaMITTER VOLTAGE VCE (V) CASE TEMPERATURE Tc (°C)
2 2001-05-24
TOSHIBA 2SD525
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
3 2001-05-24
www.ic-phoenix.com
.
