2SD2719 ,Power transistor for low frequency applicationsElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitI V = 4 ..
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2SD2719
Power transistor for low frequency applications
2SD2719 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power)
2SD2719 Solenoid Drive Applications Motor Drive Applications High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C) Note1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area,
645 mm2)
Note2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit Unit: mm
Weight: 0.01 g (typ.)
Emitter
≒5 kΩ ≒300 Ω
Base
Collector
