2SD2686 ,Power transistor for low frequency applicationsAbsolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage V 50 ..
2SD2689LS ,Horizontal Deflection Switching TransistorsAbsolute Maximum Ratings at Ta=25°C SANYO : TO-220FI(LS)Parameter Symbol Conditions Ratings UnitCol ..
2SD2695 , Silicon NPN Epitaxial Type (Darlington Power Transistor)
2SD2700 , Low frequency amplifier
2SD2704K , For Muting (20V, 0.3A)
2SD2719 ,Power transistor for low frequency applicationsElectrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. MaxUnitI V = 4 ..
322CNQ030 ,30V 300A Schottky Discrete Diode in a TO-249AA Non-Isolated packageapplications are in switching power supplies, converters,waveformfree-wheeling diodes, and reverse ..
323-00 , INDUCTOR 4 mH POTS LOW PASS FILTER
32376 , TI/E1/CEPT/ISDN-PRI DUAL TRANSFORMER
3266W-1-202 , 1/4 Square Trimming Potentiometer
3269W-1-502 , 3269 - 1/4 ” Square SMD Trimpot® Trimming Potentiometer
3296W-103 , MINIATURE MULTITURN CERMET TRIMMERS
2SD2686
Power transistor for low frequency applications
2SD2686 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington Power)
2SD2686 Solenoid Drive Applications
Motor Drive Applications High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A) Zener diode included between collector and base
Absolute Maximum Ratings (Ta = 25°C) Note 1: Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area,
645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Equivalent Circuit Unit: mm
Weight: 0.05 g (typ.)
Emitter
Collector
Base
≒5kΩ
≒300Ω
