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2SD2481
Transistor Silicon NPN Epitaxial Type (PCT process) Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
2SD2481 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SD2481 Pulse Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Equivalent Circuit Unit: mm
Weight: 0.55 g (typ.)
BASE
EMITTER
COLLECTOR
