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2SD2386
Silicon NPN Darlington Power Transistors TO-3P(I) package
2SD2386 TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington power transistor)
2SD2386 Power Amplifier Applications High breakdown voltage: VCEO = 140 V (min) Complementary to 2SB1557
Maximum Ratings (Ta = 25°C)
Equivalent Circuit Unit: mm
Weight: 4.7 g (typ.)
BASE
EMITTER≈ 100 Ω
COLLECTOR
