2SD2353 ,TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONSAPPLICATIONS Unit in mm0 High DC Current Gain : hFE = 800--32000 Low Collector Saturation Voltage F ..
2SD2359 ,Silicon NPN epitaxial planer type(For low-frequency amplification)Absolute Maximum Ratings (Ta=25˚C)nParameter Symbol Ratings UnitmarkingCollector to base voltage V ..
2SD2374 ,Silicon PNP epitaxial planar type(For power amplification)Absolute Maximum Ratings (T =25˚C)n CParameter Symbol Ratings Unit1.4– 0.22.6– 0.1Collector to 2SD ..
2SD2374A ,Power DeviceElectrical Characteristics T = 25°CCParameter Symbol Conditions Min Typ Max Unit2SD2374 I V = 60 V ..
2SD2375 ,Power DeviceElectrical Characteristics T = 25°C ± 3°CCParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SD2382 , Power Transistor
322CNQ030 ,30V 300A Schottky Discrete Diode in a TO-249AA Non-Isolated packageapplications are in switching power supplies, converters,waveformfree-wheeling diodes, and reverse ..
323-00 , INDUCTOR 4 mH POTS LOW PASS FILTER
32376 , TI/E1/CEPT/ISDN-PRI DUAL TRANSFORMER
3266W-1-202 , 1/4 Square Trimming Potentiometer
3269W-1-502 , 3269 - 1/4 ” Square SMD Trimpot® Trimming Potentiometer
3296W-103 , MINIATURE MULTITURN CERMET TRIMMERS
2SD2353
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE. POWER AMPLIFIER APPLICATIONS
TOSHIBA
2SD2353
TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE
2SID2353
POWER AMPLIFIER APPLICATIONS
0 High DC Current Gain : hFE = 800-3200
0 Low Collector Saturation Voltage
: VCE (sat) = 0.4V (Typ.)
MAXIMUM RATINGS (Tc = 25°C)
ELECTRICAL CHARACTERISTICS (Tc = 25°C)
CHARACTERISTIC SYMBOL RATING UNIT 0.7510.15
Collector-Base Voltage VCBO 60 V 2.54AO.25 2.54f..0.25
Collector-Emi; Voltage VCEO 60 V 'd-l 1 2 3 _‘,f,~ N
Emitter-Base Voltage VEBO 7 V 'ij:--EEEli,(i."
DC I 3 t - st'
Collector Current P 1 f) A
ll se CP 6 1. BASE
Base Current IB 0.6 A 2. COLLECTOR
Collector Power Ta = 25°C P 2 W 3. EMITTER
Dissipation Te = 25°C C 25 JEDEC -
Junction Temperature Tj 150 "C JEITA SC-67
Storage Temperature Range Tstg -55--150 "C TOSHIB A 2-10RI A
Weight : 1.7g (Typ.)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 60 V, IE = 0 - - 100 PA
Emitter Cut-off Current IEBO VEB = 6V, IC = 0 - - 100 PA
Collector-Emi; Breakdown
Voltage V (BR) CEO IC - 50 mA, IB - 0 60 - - V
. hFE (1) VCE = 5V, IC = 0.2A 800 - 3200
DC Current Gain hFE (2) VCE = 5V, IC = 1.5 A 350 - -
Collector-Emi) Saturation
Voltage VCE (sat) IC - 1 A, IB - 10mA - 0.4 1.0 V
Base-Emitter Voltage VBE VCE = 5 V, IC = 0.5 A - 0.7 1.0 V
Transition Frequency fT VCE = 5 V, IC = 0.5 A - 18 - MHz
. VCB = 10V, IE = o,
Collector Output Capacitance Cob f = 1 MHz - 42 - pF
TOSHIBA
IC - VCE
COMMON EMITTER
‘3 T = 2 ti'
10 c 5 C
IB = 0.5 mA
0 2 4 6 8 10
C0LLECT0R-EMITTER VOLTAGE VCE (V)
hFE - IC
COMMON EMITTER
5000 VCE = 5 V
E Tc = 100°C
= 3000
'a' 25
z 1000
0.01 0.03 0.1 0.3 1 3 5
COLLECTOR CURRENT 10 (A)
VCE (sat) - IC
3 COMMON EMITTER
IC/IB = 100
Tc = 100°C
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEML) (V)
0.01 0.03 0.1 0.3 1 3 10
COLLECTOR CURRENT 1C (A)
10 (A)
COLLECTOR CURRENT
DC CURRENT GAIN hm
COLLECTOR POWER DISSIPATION PC
2SD2353
IC - VBE
COMMON EMITTER
2.5 VCE=5V
Tc=100°C 25
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE-EMITTER VOLTAGE VBE (V)
hFE - IC
COMMON EMITTER
5000 Tc=25°C
0.01 0.03 0.1 0.3 1 3 5
COLLECTOR CURRENT IC (A)
PC - Ta
co Ta = Tc
INFINITE HEAT SINK
(2) NO HEAT SINK
0 20 40 60 80 100 120 140 160
AMBIENT TEMPERATURE Ta (°C)
TOSHIBA
2SD2353
rth - tw
CURVES SHOULD BE APPLIED IN
THERMAL LIMITED AREA.
(SINGLE NONREPETITIVE PULSE)
_ INFINITE HEAT SINK
NO HEAT SINK
(°C/W)
TRANSIENT THERMAL RESISTANCE
1m 10m 0.1 1 10 100 1000
PULSE WIDTH tw (s)
COLLECTOR CURRENT 10 (A)
SAFE OPERATING AREA
1C MAX. (PULSED) X 100 msX
IC MAX. (CONTINUOUS)
10 msX
DC OPERATION
Te = 25°C
yd. SINGLE NONREPETITIVE
PULSE Tc = 25''C
CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE. VCEO MAX.
1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA ZSD2353
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-08-23
:
www.loq.com
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