2SD2241 ,Silicon NPN Power Transistors TO-220F package2SD2241TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPESWITCHING
2SD2241 ,Silicon NPN Power Transistors TO-220F packageAPPLICATIONS Unit in mmHigh DC Current Gain : hFE=2000 (Min.)Low Saturation Voltage : VCE (sat)=1-5 ..
2SD2242 ,Power DeviceElectrical Characteristics T = 25°CECParameter Symbol Conditions Min Typ Max Unit2SD2242 I V = 60 ..
2SD2249 ,Small-signal deviceElectrical Characteristics T = 25°C ± 3°CaParameter Symbol Conditions Min Typ Max UnitCollector-em ..
2SD2252 ,Color TV Horizontal Deflection Outout ApplicationsAbsolute Maximum Ratings at Ta= 25°C unitColleetorrto.Base Voltage VCBO 1500 VColleetoriEmitter Vol ..
2SD2253 , SILICON NPN TRIPLE DIFFUSED POWER
322CNQ030 ,30V 300A Schottky Discrete Diode in a TO-249AA Non-Isolated packageapplications are in switching power supplies, converters,waveformfree-wheeling diodes, and reverse ..
323-00 , INDUCTOR 4 mH POTS LOW PASS FILTER
32376 , TI/E1/CEPT/ISDN-PRI DUAL TRANSFORMER
3266W-1-202 , 1/4 Square Trimming Potentiometer
3269W-1-502 , 3269 - 1/4 ” Square SMD Trimpot® Trimming Potentiometer
3296W-103 , MINIATURE MULTITURN CERMET TRIMMERS
2SD2241
Silicon NPN Power Transistors TO-220F package
TOSHIBA
2SD2241
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE
2SD2241
SWITCHING APPLICATIONS
0 High DC Current Gain : hFE=2000 (Min.)
0 Low Saturation Voltage l VCE (sat)=1.5V (Max.)
0 Complementary to 2SB1481
5.6 MAX.
0.75:0.15
13.0MIN.
2.54:0.25 2.54:0.25
5,. 1 2 3 _‘.3 N
',i'y--EEE-2,i.'
l. BASE
2. COLLECTOR
MAXIMUM RATINGS (Tc=25°C) 3. EMITTER
CHARACTERISTIC SYMBOL RATING UNIT JEDEC -
Collector-Base Voltage VCBO 100 V JEITA SC-67
Collector-Emi; Voltage VCEO 100 V TOSHIBA 2-10R1A
Emitter-Base Voltage VEBO 5 V Weight : 1.7g (Typ.)
DC 10 i4
Collector Current Pulse ICP , 6 A
Base Current IB 0.3 A
Collector Power Ta=25°C 2.0
. . . - o PC W
Dissipation Te=25 C 25
J unction Temperature Tj 150 °C
Storage Temperature Range Tstg -55--150 °C
EQUIVALENT CIRCUIT
COLLECTOR
TOSHIBA 2SD2241
ELECTRICAL CHARACTERISTICS (TC=25°C)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB = 100V, IE = 0 - - 20 PA
Emitter Cut-off Current IEBO VEB = 5V, 10 = 0 - - 2.5 mA
Collector-Emitter Breakdown
Voltage V (BR) CEO 10 - 10mA, IB - 0 100 - - V
. hFE (1) VCE = 2V, IC = 1.5A 2000 - -
DC Current Gain hFE (2) VCE = 2V, IC =3 A 1000 - -
Collector-Emi; Saturation
Vol tage VCE (sat) IC - 3A, IB - 6mA - - 1.5 V
Base-Emitter Saturation
Voltage VBE (sat) IC - 3A, IB - 6mA - - 2.0 V
Emitter-Collector Forward - -
Voltage VECF IE - IA, IB - 0 - - 2.0 V
OUTPUT
Turn-on Time ton - 0.2 -
Switching .
Time Storage Time tstg - 1 5 - #5
1B1% VCC=.30V
Fall Time tf IBl = -IB2 = 6mA, - 0.6 -
DUTY CYCLES 1%
2 2001-11-05
TOSHIBA
10 (A)
COLLECTOR CURRENT
BASE-EMITTER SATURATION VOLTAGE
DC CURRENT GAIN hpE
VBE (sat) (V)
IC - VCE
COMMON EMITTER
Tc = 25''C
IB = 200/1A
1 2 3 4 5 6
c0LLECT0RaNITTER VOLTAGE VCE (V)
hFE - IC
COMMON EMITTER
VCE = 2v
0.3 0.5 1 3 5
COLLECTOR CURRENT IC (A)
VBE (sat) - IC
COMMON EMITTER
IcllB=500
0.3 0.5 1 3
COLLECTOR CURRENT IC (A)
10 (A)
COLLECTOR—EMITTER SATURATION
COLLECTOR CURRENT
VOLTAGE VCE (sat) (V)
10 (A)
COLLECTOR CURRENT
2SD2241
IC - VBE
ll l COMMON EMITTER
/ I VCE=2V
Tc=100°C 25 -55
0.8 1.6 2.4 3.2 4.0
BASE-EMITTER VOLTAGE VBE (V)
VCE (sat) - IC
COMMON EMITTER
IcllB=500
Tc = - 55°C
”0.1 0.3 0.5 1 3 5
COLLECTOR CURRENT IC (A)
SAFE OPERATING AREA
10 - I 1 I 1 Ill
:10 MAX. (PULSED) .)k. . =
5 lllllll 1 \ ”0"“:
I I I I rl, I 1 yd. -
3 -I k \ l msX.
C MAX. N \ l 10ms><
-(CONTINUOUS) h Y‘
1 100ms>2<\\ ' ,
0.5 p,
.)k. SINGLE NONREPETITIVE l
PULSE Te=25'C NN N N
0.1 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
0.05 IN TEMPERATURE. VCEO MAX.
0.03 I I I I I I I
0.3 1 3 10 30 100
COLLECTOR-EMITTER VOLTAGE VCE (V)
TOSHIBA 2SD2241
RESTRICTIONS ON PRODUCT USE
000707EAA
OTOSHIBA is continually working to improve the quality and reliability of its products.
Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent
electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe
design for the entire system, and to avoid situations in which a malfunction or failure of such
TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified
operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please
keep in mind the precautions and conditions set forth in the "Handling Guide for
Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc..
OThe TOSHIBA products listed in this document are intended for usage in general electronics
applications (computer, personal equipment, office equipment, measuring equipment, industrial
robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor
warranted for usage in equipment that requires extraordinarily high quality and/or reliability or
a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended
Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship
instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA
products listed in this document shall be made at the customer's own risk.
OThe information contained herein is presented only as a guide for the applications of our
products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of
intellectual property or other rights of the third parties which may result from its use. No
license is granted by implication or otherwise under any intellectual property or other rights of
TOSHIBA CORPORATION or others.
0 The information contained herein is subject to change without notice.
4 2001-11-05
:
www.loq.com
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