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2SD2206
Transistor Silicon NPN Epitaxial Type (Darlington power transistor) Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type (Darlington power transistor)
2SD2206 Micro Motor Drive, Hammer Drive Applications
Switching Applications
Power Amplifier Applications High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Equivalent Circuit Unit: mm
Weight: 0.36 g (typ.)
BASE
EMITTER
COLLECTOR
